Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

October 25, 2018 | T. Dietl, H. Ohno and F. Matsukura
A mean-field model of hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors is presented. The model accounts for strong spin-orbit and kp couplings in the valence band, strain effects on hole density-of-states, and the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. The model successfully explains experimental results for (Ga,Mn)As, including Curie temperatures, easy axis directions, and anisotropy fields as functions of biaxial strain. It also reproduces the unusual sign, magnitude, and temperature dependence of magnetic circular dichroism in the fundamental absorption edge. The model considers the role of spin-orbit and kp interactions in determining Curie temperatures, saturation magnetization, and magnetic anisotropies. It also highlights the importance of these interactions in the physics of hole-mediated ferromagnetism in semiconductors. The model is consistent with experimental findings and provides insights into the design of novel ferromagnetic semiconductor systems. The model is based on the two-fluid model of electronic states near the metal-insulator transition, which describes the formation of bound magnetic polarons (BMP) and their role in ferromagnetic interactions. The model also considers the effects of strain, spin-orbit coupling, and the exchange splitting of the valence band on the magnetic properties of (Ga,Mn)As. The model predicts that the Curie temperature is proportional to the thermodynamic spin density-of-states, which is influenced by carrier-carrier interactions and disorder. The model also explains the observed magnetic properties of (Ga,Mn)As, including the dependence of the Curie temperature on hole concentration and the direction of the easy axis as a function of biaxial strain. The model is consistent with experimental data and provides a quantitative description of the magnetic properties of (Ga,Mn)As. The model also highlights the importance of the spin-orbit interaction in determining the magnetic anisotropy of (Ga,Mn)As. The model is based on the assumption that the magnetic properties of (Ga,Mn)As are determined by the interaction between localized spins and delocalized or weakly localized holes. The model also considers the effects of the spin-orbit interaction on the magnetic properties of (Ga,Mn)As. The model is consistent with experimental data and provides a quantitative description of the magnetic properties of (Ga,Mn)As. The model also highlights the importance of the spin-orbit interaction in determining the magnetic anisotropy of (Ga,Mn)As. The model is based on the assumption that the magnetic properties of (Ga,Mn)As are determined by the interaction between localized spins and delocalized or weakly localized holes. The model also considers the effects of the spin-orbit interaction on the magnetic properties of (Ga,Mn)As. The model is consistent with experimental data and provides a quantitative description ofA mean-field model of hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors is presented. The model accounts for strong spin-orbit and kp couplings in the valence band, strain effects on hole density-of-states, and the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. The model successfully explains experimental results for (Ga,Mn)As, including Curie temperatures, easy axis directions, and anisotropy fields as functions of biaxial strain. It also reproduces the unusual sign, magnitude, and temperature dependence of magnetic circular dichroism in the fundamental absorption edge. The model considers the role of spin-orbit and kp interactions in determining Curie temperatures, saturation magnetization, and magnetic anisotropies. It also highlights the importance of these interactions in the physics of hole-mediated ferromagnetism in semiconductors. The model is consistent with experimental findings and provides insights into the design of novel ferromagnetic semiconductor systems. The model is based on the two-fluid model of electronic states near the metal-insulator transition, which describes the formation of bound magnetic polarons (BMP) and their role in ferromagnetic interactions. The model also considers the effects of strain, spin-orbit coupling, and the exchange splitting of the valence band on the magnetic properties of (Ga,Mn)As. The model predicts that the Curie temperature is proportional to the thermodynamic spin density-of-states, which is influenced by carrier-carrier interactions and disorder. The model also explains the observed magnetic properties of (Ga,Mn)As, including the dependence of the Curie temperature on hole concentration and the direction of the easy axis as a function of biaxial strain. The model is consistent with experimental data and provides a quantitative description of the magnetic properties of (Ga,Mn)As. The model also highlights the importance of the spin-orbit interaction in determining the magnetic anisotropy of (Ga,Mn)As. The model is based on the assumption that the magnetic properties of (Ga,Mn)As are determined by the interaction between localized spins and delocalized or weakly localized holes. The model also considers the effects of the spin-orbit interaction on the magnetic properties of (Ga,Mn)As. The model is consistent with experimental data and provides a quantitative description of the magnetic properties of (Ga,Mn)As. The model also highlights the importance of the spin-orbit interaction in determining the magnetic anisotropy of (Ga,Mn)As. The model is based on the assumption that the magnetic properties of (Ga,Mn)As are determined by the interaction between localized spins and delocalized or weakly localized holes. The model also considers the effects of the spin-orbit interaction on the magnetic properties of (Ga,Mn)As. The model is consistent with experimental data and provides a quantitative description of
Reach us at info@study.space