The paper discusses the identification and characterization of single- and few-layer boron nitride (BN) using optical and Raman spectroscopy. Despite the smaller optical contrast compared to graphene, monolayers can be discerned by optimizing viewing conditions, such as using thinner SiO2 (80±10 nm) to enhance contrast to ~2.5% per layer. Raman spectroscopy confirms BN monolayers by observing an upshift in the fundamental Raman mode by up to 4 cm\(^{-1}\). The number of layers in thicker crystals can be counted by the integer-step increase in Raman intensity and optical contrast. The study highlights the potential of BN as an ultra-thin insulator for separating graphene layers, enabling new interaction phenomena like exciton condensation. The findings provide a strategy for hunting and identifying mono- and few-layer BN, facilitating further research on this two-dimensional insulator.The paper discusses the identification and characterization of single- and few-layer boron nitride (BN) using optical and Raman spectroscopy. Despite the smaller optical contrast compared to graphene, monolayers can be discerned by optimizing viewing conditions, such as using thinner SiO2 (80±10 nm) to enhance contrast to ~2.5% per layer. Raman spectroscopy confirms BN monolayers by observing an upshift in the fundamental Raman mode by up to 4 cm\(^{-1}\). The number of layers in thicker crystals can be counted by the integer-step increase in Raman intensity and optical contrast. The study highlights the potential of BN as an ultra-thin insulator for separating graphene layers, enabling new interaction phenomena like exciton condensation. The findings provide a strategy for hunting and identifying mono- and few-layer BN, facilitating further research on this two-dimensional insulator.