This study presents the development of novel hybrid Eu(II)-bromide scintillators, specifically 1D type [Eu3]EuBr3·MeOH and 0D type [Me4N]Eu3Br14·MeOH, for X-ray imaging applications. These scintillators exhibit efficient 5d-4f bandgap transition emission, which simplifies carrier transport during the scintillation process. The 1D and 0D structures, with edge/face-sharing [EuBr3]4+ octahedra, reduce bandgaps and enhance quantum confinement, leading to high light yield (~73100 ± 800 Ph MeV−1), low detection limit (~18.6 nGy s−1), and weak X-ray afterglow (~1% @ 9.6 μs). The scintillators were embedded into AAO film to achieve high spatial resolution (~27.3 lp mm−1) in X-ray imaging. The findings highlight the potential of low-dimensional rare-earth-based halides as promising materials for scintillation and optoelectronic applications.This study presents the development of novel hybrid Eu(II)-bromide scintillators, specifically 1D type [Eu3]EuBr3·MeOH and 0D type [Me4N]Eu3Br14·MeOH, for X-ray imaging applications. These scintillators exhibit efficient 5d-4f bandgap transition emission, which simplifies carrier transport during the scintillation process. The 1D and 0D structures, with edge/face-sharing [EuBr3]4+ octahedra, reduce bandgaps and enhance quantum confinement, leading to high light yield (~73100 ± 800 Ph MeV−1), low detection limit (~18.6 nGy s−1), and weak X-ray afterglow (~1% @ 9.6 μs). The scintillators were embedded into AAO film to achieve high spatial resolution (~27.3 lp mm−1) in X-ray imaging. The findings highlight the potential of low-dimensional rare-earth-based halides as promising materials for scintillation and optoelectronic applications.