This study investigates the Raman spectroscopy of single- and few-layered WS₂, focusing on how the number of layers and excitation wavelength affect the Raman response. The frequency of the A₁g(Γ) phonon mode decreases monotonically with increasing number of layers. For single-layer WS₂, a second-order Raman resonance involving the longitudinal acoustic mode (LA(M)) is observed when excited at 514.5 nm. This resonance arises from coupling between the electronic band structure and lattice vibrations. First-principles calculations were used to determine the electronic and phonon band structures of single-layer and bulk WS₂. The reduced intensity of the 2LA mode was calculated using the fourth-order Fermi golden rule as a function of laser wavelength. The results establish an unambiguous and nondestructive Raman fingerprint for identifying single- and few-layered WS₂ films. Single-layer transition metal dichalcogenides like WS₂ have attracted attention due to their unique electronic and optical properties. These materials differ significantly from their bulk counterparts in terms of optical and electronic properties due to the absence of interlayer coupling and lack of inversion symmetry. For example, the electronic band structure transitions from an indirect gap in the bulk to a direct gap in the monolayer, and valley polarization can be induced in monolayer MoS₂ by circularly polarized light. While MoS₂ has received significant attention, WS₂ has been less studied. This study demonstrates the synthesis of single-layer WS₂ triangular islands and observes intense room-temperature photoluminescence. Raman spectroscopy is a powerful tool for studying 2D materials, and this study provides the first systematic investigation of the Raman response in monolayer and few-layer WS₂ as a function of laser excitation wavelength. A novel resonant second-order Raman feature is reported in single-layer WS₂, and the general characteristics of the phonon modes that can provide a fingerprint for monolayer WS₂ are discussed. The study shows that the intensity of the 2LA(M) mode increases with decreasing number of layers, reaching a maximum for monolayer WS₂. The A₁g(Γ) mode frequency blueshifts with increasing number of layers, consistent with increasing restoring forces due to van der Waals interactions. The 2LA(M) and A₁g(Γ) phonon modes exhibit subtle redshifts with increasing layers. The unique sensitivity of second-order resonant Raman processes to precise phonon wavevectors enables unambiguous identification of the 352 cm⁻¹ peak with the M-point LA phonon. The double-resonant Raman process involves two phonons with equal and opposite momentum and an intermediate excited electronic state that resonates with the electronic band structure. This process is active only in the monolayer and is responsible for the observed intensity increase in the 2LA(M) mode at 514.5 nmThis study investigates the Raman spectroscopy of single- and few-layered WS₂, focusing on how the number of layers and excitation wavelength affect the Raman response. The frequency of the A₁g(Γ) phonon mode decreases monotonically with increasing number of layers. For single-layer WS₂, a second-order Raman resonance involving the longitudinal acoustic mode (LA(M)) is observed when excited at 514.5 nm. This resonance arises from coupling between the electronic band structure and lattice vibrations. First-principles calculations were used to determine the electronic and phonon band structures of single-layer and bulk WS₂. The reduced intensity of the 2LA mode was calculated using the fourth-order Fermi golden rule as a function of laser wavelength. The results establish an unambiguous and nondestructive Raman fingerprint for identifying single- and few-layered WS₂ films. Single-layer transition metal dichalcogenides like WS₂ have attracted attention due to their unique electronic and optical properties. These materials differ significantly from their bulk counterparts in terms of optical and electronic properties due to the absence of interlayer coupling and lack of inversion symmetry. For example, the electronic band structure transitions from an indirect gap in the bulk to a direct gap in the monolayer, and valley polarization can be induced in monolayer MoS₂ by circularly polarized light. While MoS₂ has received significant attention, WS₂ has been less studied. This study demonstrates the synthesis of single-layer WS₂ triangular islands and observes intense room-temperature photoluminescence. Raman spectroscopy is a powerful tool for studying 2D materials, and this study provides the first systematic investigation of the Raman response in monolayer and few-layer WS₂ as a function of laser excitation wavelength. A novel resonant second-order Raman feature is reported in single-layer WS₂, and the general characteristics of the phonon modes that can provide a fingerprint for monolayer WS₂ are discussed. The study shows that the intensity of the 2LA(M) mode increases with decreasing number of layers, reaching a maximum for monolayer WS₂. The A₁g(Γ) mode frequency blueshifts with increasing number of layers, consistent with increasing restoring forces due to van der Waals interactions. The 2LA(M) and A₁g(Γ) phonon modes exhibit subtle redshifts with increasing layers. The unique sensitivity of second-order resonant Raman processes to precise phonon wavevectors enables unambiguous identification of the 352 cm⁻¹ peak with the M-point LA phonon. The double-resonant Raman process involves two phonons with equal and opposite momentum and an intermediate excited electronic state that resonates with the electronic band structure. This process is active only in the monolayer and is responsible for the observed intensity increase in the 2LA(M) mode at 514.5 nm