This paper presents a method for large-area fabrication of graphene devices using inkjet printing. The researchers developed a graphene-based ink by exfoliating graphite in N-Methylpyrrolidone (NMP). They used this ink to print thin-film transistors (TFTs) with high electron mobility (up to ~95 cm² V⁻¹ s⁻¹) and transparent, conductive patterns with ~80% transmittance and ~30 kΩ/□ sheet resistance. This demonstrates the potential for all-printed, flexible, and transparent graphene devices on various substrates. The study highlights the advantages of inkjet printing for flexible electronics, including versatility, minimal process steps, and suitability for mass production. However, the mobility of previously reported inkjet-printed materials is still lower than standard silicon technology. The researchers improved the performance of their graphene ink by optimizing parameters such as viscosity, surface tension, and density to ensure stable droplet formation and uniform printing. The graphene ink was tested on different substrates, including Si/SiO₂ and borosilicate glass, to evaluate its electrical and optical properties. The results showed that the ink could produce transparent and conductive patterns with high uniformity and low roughness. The study also demonstrated the viability of the ink for fabricating TFTs with high mobility (~95 cm² V⁻¹ s⁻¹) and a high ON/OFF ratio (~10). The researchers combined their graphene ink with a common organic polymer (PQT-12) to enhance interchain hopping and achieve even higher performance. The resulting TFTs exhibited a mobility of ~0.2 cm² V⁻¹ s⁻¹ and an ON/OFF ratio of ~4×10⁵, significantly outperforming previously reported inkjet-printed devices. The study concludes that inkjet printing of graphene is a promising technique for flexible and transparent electronics, offering a low-cost and scalable solution for large-area fabrication of graphene-based devices. The results demonstrate the potential of graphene ink for future flexible and transparent electronic applications.This paper presents a method for large-area fabrication of graphene devices using inkjet printing. The researchers developed a graphene-based ink by exfoliating graphite in N-Methylpyrrolidone (NMP). They used this ink to print thin-film transistors (TFTs) with high electron mobility (up to ~95 cm² V⁻¹ s⁻¹) and transparent, conductive patterns with ~80% transmittance and ~30 kΩ/□ sheet resistance. This demonstrates the potential for all-printed, flexible, and transparent graphene devices on various substrates. The study highlights the advantages of inkjet printing for flexible electronics, including versatility, minimal process steps, and suitability for mass production. However, the mobility of previously reported inkjet-printed materials is still lower than standard silicon technology. The researchers improved the performance of their graphene ink by optimizing parameters such as viscosity, surface tension, and density to ensure stable droplet formation and uniform printing. The graphene ink was tested on different substrates, including Si/SiO₂ and borosilicate glass, to evaluate its electrical and optical properties. The results showed that the ink could produce transparent and conductive patterns with high uniformity and low roughness. The study also demonstrated the viability of the ink for fabricating TFTs with high mobility (~95 cm² V⁻¹ s⁻¹) and a high ON/OFF ratio (~10). The researchers combined their graphene ink with a common organic polymer (PQT-12) to enhance interchain hopping and achieve even higher performance. The resulting TFTs exhibited a mobility of ~0.2 cm² V⁻¹ s⁻¹ and an ON/OFF ratio of ~4×10⁵, significantly outperforming previously reported inkjet-printed devices. The study concludes that inkjet printing of graphene is a promising technique for flexible and transparent electronics, offering a low-cost and scalable solution for large-area fabrication of graphene-based devices. The results demonstrate the potential of graphene ink for future flexible and transparent electronic applications.