The paper by Radisavljevic, Whitwick, and Kis explores the potential of single-layer MoS₂ as a building block for next-generation nanoelectronic devices. Two-dimensional materials, particularly graphene, have gained significant attention due to their ease of fabrication and superior electrical properties. However, graphene lacks a band gap, making it challenging to fabricate logic circuits with low power dissipation. Single-layer MoS₂, a two-dimensional semiconductor with a direct band gap of 1.8 eV, is introduced as a complementary material to graphene. The authors demonstrate the fabrication of a simple integrated circuit composed of two n-type MoS₂ transistors, capable of amplifying signals and performing basic logic operations. The device shows high on/off ratios, making it suitable for low-power electronic applications. The study also highlights the advantages of MoS₂ over conventional silicon, including its thinner thickness and lower dielectric constant, which could lead to smaller and more efficient transistors. The findings pave the way for the integration of MoS₂ in flexible electronics and digital logic circuits at room temperature.The paper by Radisavljevic, Whitwick, and Kis explores the potential of single-layer MoS₂ as a building block for next-generation nanoelectronic devices. Two-dimensional materials, particularly graphene, have gained significant attention due to their ease of fabrication and superior electrical properties. However, graphene lacks a band gap, making it challenging to fabricate logic circuits with low power dissipation. Single-layer MoS₂, a two-dimensional semiconductor with a direct band gap of 1.8 eV, is introduced as a complementary material to graphene. The authors demonstrate the fabrication of a simple integrated circuit composed of two n-type MoS₂ transistors, capable of amplifying signals and performing basic logic operations. The device shows high on/off ratios, making it suitable for low-power electronic applications. The study also highlights the advantages of MoS₂ over conventional silicon, including its thinner thickness and lower dielectric constant, which could lead to smaller and more efficient transistors. The findings pave the way for the integration of MoS₂ in flexible electronics and digital logic circuits at room temperature.