Single-layer molybdenum disulfide (MoS₂) has been demonstrated as a promising material for fabricating integrated circuits and performing logic operations at room temperature. This study shows that MoS₂, a two-dimensional semiconductor with a direct band gap of 1.8 eV, can be used to create simple integrated circuits composed of two MoS₂ transistors. These circuits are capable of performing basic logic operations, such as inverting signals (NOT gate) and NOR operations, which are fundamental to digital electronics. The research highlights the advantages of MoS₂ over traditional materials like graphene. Unlike graphene, which lacks a band gap and requires complex methods to introduce one, MoS₂ naturally possesses a band gap, enabling the fabrication of field-effect transistors with high on/off current ratios and low power consumption. Additionally, MoS₂'s ultrathin nature allows for reduced short-channel effects, making it suitable for smaller, more power-efficient transistors. The study describes the fabrication of MoS₂-based integrated circuits using micromechanical exfoliation and electron-beam lithography. The circuits were characterized using electrical measurements, revealing high performance metrics such as a transconductance of 12 μS and a voltage gain exceeding 4, making them suitable for integration into digital circuits. The inverter demonstrated in the study can convert a logical 0 to a logical 1, with a voltage gain above 1, essential for cascading logic gates. Furthermore, the research shows that MoS₂ can be used to construct a NOR gate, a fundamental logic operation that can be used to build all other logical operations. The study also discusses the potential of MoS₂ for future applications in flexible electronics and nanoelectronics, noting its advantages over silicon, including thinner thickness and lower dielectric constant. Despite these promising results, challenges remain in scaling up the production of MoS₂-based devices for commercial applications. The study emphasizes the need for methods to grow continuous monolayers of MoS₂ or similar 2D materials to enable more complex integrated circuits with a large number of elements. Overall, this work represents a critical step towards the development of digital logic circuits using two-dimensional materials at room temperature.Single-layer molybdenum disulfide (MoS₂) has been demonstrated as a promising material for fabricating integrated circuits and performing logic operations at room temperature. This study shows that MoS₂, a two-dimensional semiconductor with a direct band gap of 1.8 eV, can be used to create simple integrated circuits composed of two MoS₂ transistors. These circuits are capable of performing basic logic operations, such as inverting signals (NOT gate) and NOR operations, which are fundamental to digital electronics. The research highlights the advantages of MoS₂ over traditional materials like graphene. Unlike graphene, which lacks a band gap and requires complex methods to introduce one, MoS₂ naturally possesses a band gap, enabling the fabrication of field-effect transistors with high on/off current ratios and low power consumption. Additionally, MoS₂'s ultrathin nature allows for reduced short-channel effects, making it suitable for smaller, more power-efficient transistors. The study describes the fabrication of MoS₂-based integrated circuits using micromechanical exfoliation and electron-beam lithography. The circuits were characterized using electrical measurements, revealing high performance metrics such as a transconductance of 12 μS and a voltage gain exceeding 4, making them suitable for integration into digital circuits. The inverter demonstrated in the study can convert a logical 0 to a logical 1, with a voltage gain above 1, essential for cascading logic gates. Furthermore, the research shows that MoS₂ can be used to construct a NOR gate, a fundamental logic operation that can be used to build all other logical operations. The study also discusses the potential of MoS₂ for future applications in flexible electronics and nanoelectronics, noting its advantages over silicon, including thinner thickness and lower dielectric constant. Despite these promising results, challenges remain in scaling up the production of MoS₂-based devices for commercial applications. The study emphasizes the need for methods to grow continuous monolayers of MoS₂ or similar 2D materials to enable more complex integrated circuits with a large number of elements. Overall, this work represents a critical step towards the development of digital logic circuits using two-dimensional materials at room temperature.