This paper presents the fabrication and characterization of integrated circuits based on bilayer molybdenum disulfide (MoS₂) transistors. The authors demonstrate the first fully integrated multi-stage logic circuits on 2D materials, including an inverter, a NAND gate, a static random access memory (SRAM) cell, and a five-stage ring oscillator. These circuits are fabricated on a single sheet of bilayer MoS₂, using both enhancement-mode and depletion-mode transistors. The bilayer MoS₂ transistors exhibit high on/off current ratios and on-state current densities, with the highest values reported for MoS₂ FETs to date. The circuits operate at a fundamental oscillation frequency of 1.6 MHz, demonstrating the potential of 2D materials for high-performance, low-power applications in conventional and ubiquitous electronics. The study highlights the advantages of 2D materials, such as high mobility and mechanical flexibility, over traditional materials like amorphous silicon and organic semiconductors.This paper presents the fabrication and characterization of integrated circuits based on bilayer molybdenum disulfide (MoS₂) transistors. The authors demonstrate the first fully integrated multi-stage logic circuits on 2D materials, including an inverter, a NAND gate, a static random access memory (SRAM) cell, and a five-stage ring oscillator. These circuits are fabricated on a single sheet of bilayer MoS₂, using both enhancement-mode and depletion-mode transistors. The bilayer MoS₂ transistors exhibit high on/off current ratios and on-state current densities, with the highest values reported for MoS₂ FETs to date. The circuits operate at a fundamental oscillation frequency of 1.6 MHz, demonstrating the potential of 2D materials for high-performance, low-power applications in conventional and ubiquitous electronics. The study highlights the advantages of 2D materials, such as high mobility and mechanical flexibility, over traditional materials like amorphous silicon and organic semiconductors.