This paper presents the first demonstration of fully integrated multi-stage logic circuits based on few-layer MoS₂ transistors. The circuits include an inverter, a NAND gate, a static random access memory (SRAM) cell, and a five-stage ring oscillator, all fabricated on a single sheet of bilayer MoS₂. The circuits are based on direct-coupled FET logic (DCFL) technology, which allows for the integration of both enhancement-mode (E-mode) and depletion-mode (D-mode) transistors on the same chip. The bilayer MoS₂ used in this study is obtained through micro-mechanical cleavage and has a thickness of 13 Å, confirming it as a bilayer structure. The number of layers is verified using atomic force microscopy (AFM) and Raman spectroscopy. The transistors exhibit high on/off current ratios, record on-state current densities, and excellent current saturation characteristics. The circuits operate at a supply voltage of 2 V, with the logic state 1 represented by a voltage close to 2 V and logic state 0 by a voltage close to 0 V. The inverter circuit demonstrates a voltage transfer curve with a gain close to 5, and the NAND gate circuit shows stable operation for all four possible logic combinations. The SRAM cell functions as a stable memory cell, with the output remaining in the set logic state after the input switch is opened. The five-stage ring oscillator operates at a fundamental oscillation frequency of 1.6 MHz, demonstrating the high-frequency switching capability of MoS₂. The performance of the ring oscillator is at least an order of magnitude better than the fastest integrated organic semiconductor ring oscillators and rivals the speed of ring oscillators constructed from single-crystalline silicon. The results show that MoS₂ is a promising material for both conventional and ubiquitous electronics, with the potential to combine silicon-like performance with the mechanical flexibility and integration versatility of organic semiconductors. Further optimization is underway to increase operating speed and reduce power dissipation.This paper presents the first demonstration of fully integrated multi-stage logic circuits based on few-layer MoS₂ transistors. The circuits include an inverter, a NAND gate, a static random access memory (SRAM) cell, and a five-stage ring oscillator, all fabricated on a single sheet of bilayer MoS₂. The circuits are based on direct-coupled FET logic (DCFL) technology, which allows for the integration of both enhancement-mode (E-mode) and depletion-mode (D-mode) transistors on the same chip. The bilayer MoS₂ used in this study is obtained through micro-mechanical cleavage and has a thickness of 13 Å, confirming it as a bilayer structure. The number of layers is verified using atomic force microscopy (AFM) and Raman spectroscopy. The transistors exhibit high on/off current ratios, record on-state current densities, and excellent current saturation characteristics. The circuits operate at a supply voltage of 2 V, with the logic state 1 represented by a voltage close to 2 V and logic state 0 by a voltage close to 0 V. The inverter circuit demonstrates a voltage transfer curve with a gain close to 5, and the NAND gate circuit shows stable operation for all four possible logic combinations. The SRAM cell functions as a stable memory cell, with the output remaining in the set logic state after the input switch is opened. The five-stage ring oscillator operates at a fundamental oscillation frequency of 1.6 MHz, demonstrating the high-frequency switching capability of MoS₂. The performance of the ring oscillator is at least an order of magnitude better than the fastest integrated organic semiconductor ring oscillators and rivals the speed of ring oscillators constructed from single-crystalline silicon. The results show that MoS₂ is a promising material for both conventional and ubiquitous electronics, with the potential to combine silicon-like performance with the mechanical flexibility and integration versatility of organic semiconductors. Further optimization is underway to increase operating speed and reduce power dissipation.