This study presents an integrated optical frequency division (OFD) system for generating ultra-low-noise microwave and mmWave signals in a chip-based photonic platform. The system uses a planar-waveguide-based reference coil cavity for phase stability and soliton microcombs generated in a waveguide-coupled microresonator for frequency division. The system achieves record-low phase noise for integrated photonic mmWave oscillators, with a phase noise of -114 dBc/Hz at 10 kHz offset frequency, which is two orders of magnitude better than previous silicon nitride-based photonic oscillators. The system also demonstrates high-power mmWave generation using a flip-chip bonded charge-compensated modified uni-travelling carrier photodiode (CC-MUTC PD). The mmWave phase noise is measured using a new mmWave to microwave frequency division (mmFD) method, which allows for electrical measurement of mmWave phase noise. The system is compatible with complementary metal-oxide-semiconductor (CMOS) technology and can be heterogeneously integrated with semiconductor lasers, amplifiers, and photodiodes, enabling large-volume, low-cost manufacturing. The study also discusses the potential of integrated photonic oscillators for future applications, including radar, communication, and sensing systems. The results demonstrate the feasibility of integrated photonic OFD for generating ultra-low-noise microwave and mmWave signals, with the potential for further improvements in phase noise performance through future advancements in photonic integrated circuits.This study presents an integrated optical frequency division (OFD) system for generating ultra-low-noise microwave and mmWave signals in a chip-based photonic platform. The system uses a planar-waveguide-based reference coil cavity for phase stability and soliton microcombs generated in a waveguide-coupled microresonator for frequency division. The system achieves record-low phase noise for integrated photonic mmWave oscillators, with a phase noise of -114 dBc/Hz at 10 kHz offset frequency, which is two orders of magnitude better than previous silicon nitride-based photonic oscillators. The system also demonstrates high-power mmWave generation using a flip-chip bonded charge-compensated modified uni-travelling carrier photodiode (CC-MUTC PD). The mmWave phase noise is measured using a new mmWave to microwave frequency division (mmFD) method, which allows for electrical measurement of mmWave phase noise. The system is compatible with complementary metal-oxide-semiconductor (CMOS) technology and can be heterogeneously integrated with semiconductor lasers, amplifiers, and photodiodes, enabling large-volume, low-cost manufacturing. The study also discusses the potential of integrated photonic oscillators for future applications, including radar, communication, and sensing systems. The results demonstrate the feasibility of integrated photonic OFD for generating ultra-low-noise microwave and mmWave signals, with the potential for further improvements in phase noise performance through future advancements in photonic integrated circuits.