Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss

Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss

17 April 2024 | Bo Cai, Lu Zhou, Pei-Yan Zhao, Hua-Long Peng, Zhi-Ling Hou, Pengfei Hu, Li-Min Liu & Guang-Sheng Wang
This study proposes an interface-induced dual-pinning mechanism to enhance low-frequency electromagnetic wave (EMW) absorption. By constructing a bilayer core-shell structure of NiFe2O4 (NFO) @BiFeO3 (BFO)/@polypyrrole (PPy), the researchers establish a magnetoelectric bias interface. This interface induces distinct magnetic pinning of the magnetic moment in NFO and dielectric pinning of the dipole rotation in PPy, leading to optimized impedance and enhanced attenuation at low frequencies. The minimum reflection loss (RLmin) at a thickness of 4.43 mm reaches -65.30 dB, achieving an optimal absorption efficiency of 99.99997%. The effective absorption bandwidth (EAB) covers the C-band (4.72 - 7.04 GHz) with a low filling rate of 15.0 wt.%. The work demonstrates a significant improvement in low-frequency EMW absorption and paves the way for the development of high-performance low-frequency EMWA materials.This study proposes an interface-induced dual-pinning mechanism to enhance low-frequency electromagnetic wave (EMW) absorption. By constructing a bilayer core-shell structure of NiFe2O4 (NFO) @BiFeO3 (BFO)/@polypyrrole (PPy), the researchers establish a magnetoelectric bias interface. This interface induces distinct magnetic pinning of the magnetic moment in NFO and dielectric pinning of the dipole rotation in PPy, leading to optimized impedance and enhanced attenuation at low frequencies. The minimum reflection loss (RLmin) at a thickness of 4.43 mm reaches -65.30 dB, achieving an optimal absorption efficiency of 99.99997%. The effective absorption bandwidth (EAB) covers the C-band (4.72 - 7.04 GHz) with a low filling rate of 15.0 wt.%. The work demonstrates a significant improvement in low-frequency EMW absorption and paves the way for the development of high-performance low-frequency EMWA materials.
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