The study investigates the intrinsic and extrinsic performance limits of graphene devices on SiO₂. The linear dispersion relation in graphene predicts that resistivity due to isotropic scatterers is independent of carrier density. Acoustic phonon scattering is shown to be independent of carrier density, placing an intrinsic limit on resistivity at room temperature (RT) of only 30 Ω. At a technologically relevant carrier density of 10¹² cm⁻², the mean free path for electron-acoustic phonon scattering exceeds 2 microns, leading to an intrinsic mobility limit of 2 × 10⁵ cm²/Vs, surpassing the highest known inorganic semiconductors and semiconducting carbon nanotubes. However, extrinsic scattering by surface phonons of the SiO₂ substrate introduces a strong temperature-dependent resistivity above ~200 K, limiting the RT mobility to ~4 × 10⁴ cm²/Vs. The study also discusses the nature of electron-phonon scattering in graphene, showing that remote interfacial phonon (RIP) scattering by the polar optical phonons of the SiO₂ substrate is the most likely origin of the activated resistivity term. The results provide a comprehensive understanding of the current limitations and future potential of graphene as an electronic material, highlighting the importance of substrate choice and the trade-offs between intrinsic and extrinsic factors.The study investigates the intrinsic and extrinsic performance limits of graphene devices on SiO₂. The linear dispersion relation in graphene predicts that resistivity due to isotropic scatterers is independent of carrier density. Acoustic phonon scattering is shown to be independent of carrier density, placing an intrinsic limit on resistivity at room temperature (RT) of only 30 Ω. At a technologically relevant carrier density of 10¹² cm⁻², the mean free path for electron-acoustic phonon scattering exceeds 2 microns, leading to an intrinsic mobility limit of 2 × 10⁵ cm²/Vs, surpassing the highest known inorganic semiconductors and semiconducting carbon nanotubes. However, extrinsic scattering by surface phonons of the SiO₂ substrate introduces a strong temperature-dependent resistivity above ~200 K, limiting the RT mobility to ~4 × 10⁴ cm²/Vs. The study also discusses the nature of electron-phonon scattering in graphene, showing that remote interfacial phonon (RIP) scattering by the polar optical phonons of the SiO₂ substrate is the most likely origin of the activated resistivity term. The results provide a comprehensive understanding of the current limitations and future potential of graphene as an electronic material, highlighting the importance of substrate choice and the trade-offs between intrinsic and extrinsic factors.