The paper by Podzorov et al. reports on the intrinsic charge transport on the surface of rubrene crystals using a novel air-gap transistor stamp technique. This method minimizes surface defects and allows for the observation of intrinsic transport, which is not dominated by static disorder. The key findings include: 1. **Intrinsic Transport Signature**: The mobility of p-type carriers increases with cooling and exhibits anisotropy, particularly along the b-axis. 2. **Anisotropy and Temperature Dependence**: The mobility anisotropy vanishes at lower temperatures where shallow traps dominate the transport. 3. **Deep Traps**: Deep traps introduced by X-ray radiation increase the field-effect threshold without affecting the mobility. 4. **Transport Regimes**: Two regimes are identified: intrinsic transport at high temperatures (150-300 K) and shallow trap-dominated transport at lower temperatures (<150 K). 5. **X-ray Treatment**: X-ray exposure increases the field-effect threshold without affecting the mobility, indicating that deep traps filled with carriers do not scatter mobile polaronic carriers. The study provides insights into the role of shallow and deep traps in organic semiconductors and highlights the potential for observing new electronic phases at high charge densities.The paper by Podzorov et al. reports on the intrinsic charge transport on the surface of rubrene crystals using a novel air-gap transistor stamp technique. This method minimizes surface defects and allows for the observation of intrinsic transport, which is not dominated by static disorder. The key findings include: 1. **Intrinsic Transport Signature**: The mobility of p-type carriers increases with cooling and exhibits anisotropy, particularly along the b-axis. 2. **Anisotropy and Temperature Dependence**: The mobility anisotropy vanishes at lower temperatures where shallow traps dominate the transport. 3. **Deep Traps**: Deep traps introduced by X-ray radiation increase the field-effect threshold without affecting the mobility. 4. **Transport Regimes**: Two regimes are identified: intrinsic transport at high temperatures (150-300 K) and shallow trap-dominated transport at lower temperatures (<150 K). 5. **X-ray Treatment**: X-ray exposure increases the field-effect threshold without affecting the mobility, indicating that deep traps filled with carriers do not scatter mobile polaronic carriers. The study provides insights into the role of shallow and deep traps in organic semiconductors and highlights the potential for observing new electronic phases at high charge densities.