This study investigates the intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi₂Te₄. The researchers demonstrate a field-trained exchange bias of up to -400 mT, which exhibits high repeatability and can be easily reset by a large training field. This effect persists even with zero-field initialization, contrasting with traditional field-cooled exchange bias. The study highlights the tunable exchange bias in a single antiferromagnetic compound without the need for an additional magnetic layer, offering insights into exchange interaction mechanisms. The findings suggest potential for systematic design of topological antiferromagnetic spintronics. The study focuses on the exchange interactions in an uncompensated topological antiferromagnetic MnBi₂Te₄ thin film. The 7 septuple-layer (SL) thickness is chosen as it is the most accessible for experiments. The quality of the devices is confirmed by their large anomalous Hall effect in the spin-alignment phase. The magnetic exchange interaction plays a crucial role in magnetic memory and spintronic devices. The exchange bias effect, observed as a horizontal shift in the magnetic hysteresis loop, is typically found in FM/AFM hetero-bilayers. The study also explores the exchange bias effect in other heterostructures, indicating the complex nature of interface pinning exchange interactions. The study presents a comprehensive investigation of the exchange bias effect in uncompensated antiferromagnetic MnBi₂Te₄ devices. The presence of both field cooling and field training-induced exchange bias indicates the existence of exchange interaction between the uncompensated and compensated AFM layers, leading to the formation of a quasi-FM/AFM structure. The results show that the exchange bias effect remains robust over multiple field sweeps, making it highly reliable for spintronic applications. The study also discusses the mechanisms behind the exchange bias effect, including the role of exchange coupling strength and domain structure. The findings suggest that the exchange bias effect can be controlled through various methods, such as oxidation, intercalation, strain, and hydrostatic pressure. The study concludes that the exchange bias effect in MnBi₂Te₄ is a promising candidate for spintronic applications due to its tunability and robustness.This study investigates the intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi₂Te₄. The researchers demonstrate a field-trained exchange bias of up to -400 mT, which exhibits high repeatability and can be easily reset by a large training field. This effect persists even with zero-field initialization, contrasting with traditional field-cooled exchange bias. The study highlights the tunable exchange bias in a single antiferromagnetic compound without the need for an additional magnetic layer, offering insights into exchange interaction mechanisms. The findings suggest potential for systematic design of topological antiferromagnetic spintronics. The study focuses on the exchange interactions in an uncompensated topological antiferromagnetic MnBi₂Te₄ thin film. The 7 septuple-layer (SL) thickness is chosen as it is the most accessible for experiments. The quality of the devices is confirmed by their large anomalous Hall effect in the spin-alignment phase. The magnetic exchange interaction plays a crucial role in magnetic memory and spintronic devices. The exchange bias effect, observed as a horizontal shift in the magnetic hysteresis loop, is typically found in FM/AFM hetero-bilayers. The study also explores the exchange bias effect in other heterostructures, indicating the complex nature of interface pinning exchange interactions. The study presents a comprehensive investigation of the exchange bias effect in uncompensated antiferromagnetic MnBi₂Te₄ devices. The presence of both field cooling and field training-induced exchange bias indicates the existence of exchange interaction between the uncompensated and compensated AFM layers, leading to the formation of a quasi-FM/AFM structure. The results show that the exchange bias effect remains robust over multiple field sweeps, making it highly reliable for spintronic applications. The study also discusses the mechanisms behind the exchange bias effect, including the role of exchange coupling strength and domain structure. The findings suggest that the exchange bias effect can be controlled through various methods, such as oxidation, intercalation, strain, and hydrostatic pressure. The study concludes that the exchange bias effect in MnBi₂Te₄ is a promising candidate for spintronic applications due to its tunability and robustness.