The paper reports the observation of an extremely large one-dimensional positive magnetoresistance (XMR) in the layered transition metal dichalcogenide WTe₂. The XMR reaches up to 452,700% at 4.5 Kelvin in a magnetic field of 14.7 Tesla and 2.5 million% at 0.4 Kelvin in 45 Tesla, with no saturation. The XMR is highly anisotropic, maximized along the crystallographic direction where small pockets of holes and electrons are found in the electronic structure. The study highlights the potential of WTe₂ for applications in magnetic sensors, memory, and spintronics due to its unique one-dimensional structure and strong anisotropy. The electronic structure calculations suggest that WTe₂ is a semimetal with a semimetallic character and a potential second set of electron and hole pockets forming along the Z - U direction. The findings indicate that WTe₂ could be a promising material for advanced nanostructures and devices, particularly in low-temperature magnetic field sensing and orientation.The paper reports the observation of an extremely large one-dimensional positive magnetoresistance (XMR) in the layered transition metal dichalcogenide WTe₂. The XMR reaches up to 452,700% at 4.5 Kelvin in a magnetic field of 14.7 Tesla and 2.5 million% at 0.4 Kelvin in 45 Tesla, with no saturation. The XMR is highly anisotropic, maximized along the crystallographic direction where small pockets of holes and electrons are found in the electronic structure. The study highlights the potential of WTe₂ for applications in magnetic sensors, memory, and spintronics due to its unique one-dimensional structure and strong anisotropy. The electronic structure calculations suggest that WTe₂ is a semimetal with a semimetallic character and a potential second set of electron and hole pockets forming along the Z - U direction. The findings indicate that WTe₂ could be a promising material for advanced nanostructures and devices, particularly in low-temperature magnetic field sensing and orientation.