A team of researchers from the University of Texas at Austin and Texas Instruments has developed a method to grow large-area, high-quality, and uniform graphene films on copper foils. Using chemical vapor deposition (CVD) with methane, they produced graphene films of centimeter-scale on copper substrates. The films are predominantly single-layer graphene with less than 5% of the area consisting of few-layer graphene. The films are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. They also developed a method to transfer these graphene films to arbitrary substrates. Dual-gated field-effect transistors fabricated on Si/SiO₂ substrates showed electron mobilities as high as 4050 cm²V⁻¹s⁻¹ at room temperature. Graphene, a single layer of sp²-bonded carbon atoms, is a quasi-two-dimensional material. It has attracted great interest due to its unique band structure and physical properties. However, the size of graphene films produced is limited to small sizes because they are mostly produced by exfoliating graphite, which is not a scalable technique. Graphene has also been synthesized by the desorption of silicon from silicon carbide surfaces and by a surface precipitation process of carbon in some transition metals. Electronic applications require high-quality, large-area graphene that can be manipulated to make complex devices and integrated into silicon device flows. Field effect transistors (FETs) fabricated with exfoliated graphite have shown promising electrical properties, but these devices will not meet the silicon device scaling requirements, especially those for power reduction and performance. A proposed device that could meet the silicon roadmap requirements beyond the 15 nm node is a 'BisFET' device made up of two graphene layers separated by a thin dielectric. The ability to create this device can be facilitated by the availability of large-area graphene. Making a transparent electrode, another promising application of graphene, also requires large films. The researchers found that graphene growth on copper is self-limited. They developed a CVD growth process on copper foils (25 µm thick in their experiment). The films grow directly on the surface by a surface-catalyzed process and the film is predominantly graphene with <5% of the area having two- and three-layer graphene flakes. Under their processing conditions, the two- and three-layer flakes do not grow larger with time. One of the major benefits of their process is that it can be used to grow graphene on 300 mm copper films on Si substrates. It is also well known that annealing of Cu can lead to very large grains. They used Raman spectroscopy to evaluate the quality and uniformity of graphene on SiO₂/Si substrate. The Raman spectra showed typical features of monolayer graphene, e.g., ~0.5 G-to-2D intensity ratio, and a symmetricA team of researchers from the University of Texas at Austin and Texas Instruments has developed a method to grow large-area, high-quality, and uniform graphene films on copper foils. Using chemical vapor deposition (CVD) with methane, they produced graphene films of centimeter-scale on copper substrates. The films are predominantly single-layer graphene with less than 5% of the area consisting of few-layer graphene. The films are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. They also developed a method to transfer these graphene films to arbitrary substrates. Dual-gated field-effect transistors fabricated on Si/SiO₂ substrates showed electron mobilities as high as 4050 cm²V⁻¹s⁻¹ at room temperature. Graphene, a single layer of sp²-bonded carbon atoms, is a quasi-two-dimensional material. It has attracted great interest due to its unique band structure and physical properties. However, the size of graphene films produced is limited to small sizes because they are mostly produced by exfoliating graphite, which is not a scalable technique. Graphene has also been synthesized by the desorption of silicon from silicon carbide surfaces and by a surface precipitation process of carbon in some transition metals. Electronic applications require high-quality, large-area graphene that can be manipulated to make complex devices and integrated into silicon device flows. Field effect transistors (FETs) fabricated with exfoliated graphite have shown promising electrical properties, but these devices will not meet the silicon device scaling requirements, especially those for power reduction and performance. A proposed device that could meet the silicon roadmap requirements beyond the 15 nm node is a 'BisFET' device made up of two graphene layers separated by a thin dielectric. The ability to create this device can be facilitated by the availability of large-area graphene. Making a transparent electrode, another promising application of graphene, also requires large films. The researchers found that graphene growth on copper is self-limited. They developed a CVD growth process on copper foils (25 µm thick in their experiment). The films grow directly on the surface by a surface-catalyzed process and the film is predominantly graphene with <5% of the area having two- and three-layer graphene flakes. Under their processing conditions, the two- and three-layer flakes do not grow larger with time. One of the major benefits of their process is that it can be used to grow graphene on 300 mm copper films on Si substrates. It is also well known that annealing of Cu can lead to very large grains. They used Raman spectroscopy to evaluate the quality and uniformity of graphene on SiO₂/Si substrate. The Raman spectra showed typical features of monolayer graphene, e.g., ~0.5 G-to-2D intensity ratio, and a symmetric