The paper presents a method for large-area synthesis of high-quality and uniform graphene films on copper substrates using chemical vapor deposition (CVD) with methane. The films are predominantly single-layer graphene, with less than 5% of the area containing few layers, and they are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to limit the growth process, making it self-limiting. The authors also developed transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO₂ substrates showed electron mobilities as high as 4050 cm²V⁻¹s⁻¹ at room temperature. The growth process is self-limited, and the films are of reasonable quality, suggesting that further improvements can be made to achieve material quality equivalent to exfoliated natural graphite.The paper presents a method for large-area synthesis of high-quality and uniform graphene films on copper substrates using chemical vapor deposition (CVD) with methane. The films are predominantly single-layer graphene, with less than 5% of the area containing few layers, and they are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to limit the growth process, making it self-limiting. The authors also developed transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO₂ substrates showed electron mobilities as high as 4050 cm²V⁻¹s⁻¹ at room temperature. The growth process is self-limited, and the films are of reasonable quality, suggesting that further improvements can be made to achieve material quality equivalent to exfoliated natural graphite.