A novel strategy, light and matter co-confined multi-photon lithography (LMC-MPL), is introduced to overcome the optical diffraction barrier and proximity effect in multi-photon lithography (MPL). This method combines photo-inhibition and chemical quenchers to achieve ultra-high precision and lateral resolution. The study explores the quenching and photoinhibition mechanisms, revealing that the synergy of quenchers and photo-inhibition leads to a narrow distribution of free radicals, enabling a critical dimension (CD) of 30 nm and lateral resolution (LR) of 100 nm. This performance significantly reduces the gap with conventional lithography techniques like e-beam lithography (EBL) and extreme ultraviolet lithography (EUV). The research demonstrates that the use of TEMPO as a quencher effectively suppresses radical diffusion, enhancing the matter-confining capability. The study also investigates the light-confining mechanism, revealing a two-step-STED process that enables precise control over polymerization. Mathematical modeling confirms that the synergy of quenchers and photo-inhibition achieves the narrowest free radical distribution, resulting in high precision and resolution. LMC-MPL is shown to fabricate fine 2.5D and 3D structures with high precision, including a 3D Nezha model and woodpile structures. The method also enables high-precision pattern transfer on silicon wafers, achieving a CD of 52 nm and maintaining quality at larger dimensions. The study highlights the potential of LMC-MPL for optoelectronics and integrated circuits, with future directions focusing on developing photoresists with both high sensitivity and precision.A novel strategy, light and matter co-confined multi-photon lithography (LMC-MPL), is introduced to overcome the optical diffraction barrier and proximity effect in multi-photon lithography (MPL). This method combines photo-inhibition and chemical quenchers to achieve ultra-high precision and lateral resolution. The study explores the quenching and photoinhibition mechanisms, revealing that the synergy of quenchers and photo-inhibition leads to a narrow distribution of free radicals, enabling a critical dimension (CD) of 30 nm and lateral resolution (LR) of 100 nm. This performance significantly reduces the gap with conventional lithography techniques like e-beam lithography (EBL) and extreme ultraviolet lithography (EUV). The research demonstrates that the use of TEMPO as a quencher effectively suppresses radical diffusion, enhancing the matter-confining capability. The study also investigates the light-confining mechanism, revealing a two-step-STED process that enables precise control over polymerization. Mathematical modeling confirms that the synergy of quenchers and photo-inhibition achieves the narrowest free radical distribution, resulting in high precision and resolution. LMC-MPL is shown to fabricate fine 2.5D and 3D structures with high precision, including a 3D Nezha model and woodpile structures. The method also enables high-precision pattern transfer on silicon wafers, achieving a CD of 52 nm and maintaining quality at larger dimensions. The study highlights the potential of LMC-MPL for optoelectronics and integrated circuits, with future directions focusing on developing photoresists with both high sensitivity and precision.