The study reports the first visualization of edge states in a fractional Chern insulator (FCI) using microwave impedance microscopy (MIM). The researchers used a twisted MoTe2 bilayer, which exhibits the zero-field fractional quantum Hall effect (FQHE), to observe the bulk-edge correspondence. By tuning the carrier density and interlayer electric field, they observed the system transitioning between metallic and FCI states, with the latter showing insulating bulk and conductive edges. The MIM technique, combined with a monolayer WS2 top gate, allowed for high-resolution imaging of the edge states and bulk states, revealing the characteristic width and behavior of the edge states. The study also explored the evolution of edge states across topological phase transitions, providing insights into the physics of fractional edge states and their potential applications in topological quantum computing and anyonic braiding.The study reports the first visualization of edge states in a fractional Chern insulator (FCI) using microwave impedance microscopy (MIM). The researchers used a twisted MoTe2 bilayer, which exhibits the zero-field fractional quantum Hall effect (FQHE), to observe the bulk-edge correspondence. By tuning the carrier density and interlayer electric field, they observed the system transitioning between metallic and FCI states, with the latter showing insulating bulk and conductive edges. The MIM technique, combined with a monolayer WS2 top gate, allowed for high-resolution imaging of the edge states and bulk states, revealing the characteristic width and behavior of the edge states. The study also explored the evolution of edge states across topological phase transitions, providing insights into the physics of fractional edge states and their potential applications in topological quantum computing and anyonic braiding.