This study investigates the effect of local strain engineering on the electronic band structure of atomically thin molybdenum disulfide (MoS₂). By inducing large localized uniaxial strains through controlled delamination from a substrate, the researchers observe a strain-induced reduction in the direct bandgap and a funneling of photogenerated excitons towards regions of higher strain. A non-uniform tight-binding model is developed to simulate the electronic properties of MoS₂ nanolayers with complex strain geometries, showing good agreement with experimental results. The study demonstrates that localized strain can be used to tune the band structure of MoS₂, enabling the engineering of spatial variations in vibrational and optoelectronic properties. The results show that the direct bandgap transition energy decreases with increasing uniaxial strain, with a 2.5% tensile strain leading to a reduction of about 90 meV. This strain-induced change is comparable to that achieved in semiconducting nanowires and quantum dots, but the method allows for local modification of the band structure on the nanometer scale. The researchers also show that the non-uniform strain can trap excitons, creating a "funnel effect" where excitons drift to lower bandgap regions before recombining. This effect is supported by both experimental observations and theoretical modeling. The study highlights the potential of local strain engineering for applications in optoelectronics, photovoltaics, and quantum optics, offering a new strategy for tailoring the properties of atomically thin materials. The technique described provides a route for local strain engineering in both MoS₂ and other two-dimensional crystals, opening up many applications in diverse fields.This study investigates the effect of local strain engineering on the electronic band structure of atomically thin molybdenum disulfide (MoS₂). By inducing large localized uniaxial strains through controlled delamination from a substrate, the researchers observe a strain-induced reduction in the direct bandgap and a funneling of photogenerated excitons towards regions of higher strain. A non-uniform tight-binding model is developed to simulate the electronic properties of MoS₂ nanolayers with complex strain geometries, showing good agreement with experimental results. The study demonstrates that localized strain can be used to tune the band structure of MoS₂, enabling the engineering of spatial variations in vibrational and optoelectronic properties. The results show that the direct bandgap transition energy decreases with increasing uniaxial strain, with a 2.5% tensile strain leading to a reduction of about 90 meV. This strain-induced change is comparable to that achieved in semiconducting nanowires and quantum dots, but the method allows for local modification of the band structure on the nanometer scale. The researchers also show that the non-uniform strain can trap excitons, creating a "funnel effect" where excitons drift to lower bandgap regions before recombining. This effect is supported by both experimental observations and theoretical modeling. The study highlights the potential of local strain engineering for applications in optoelectronics, photovoltaics, and quantum optics, offering a new strategy for tailoring the properties of atomically thin materials. The technique described provides a route for local strain engineering in both MoS₂ and other two-dimensional crystals, opening up many applications in diverse fields.