The paper by Bachtold et al. demonstrates the development of logic circuits using field-effect transistors based on single carbon nanotubes. The device layout features local gates that provide excellent capacitive coupling between the gate and the nanotube, enabling strong electrostatic doping from p-doping to n-doping. This allows for the study of nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors exhibit favorable characteristics such as high gain (>10), a large on-off ratio (>10^8), and room-temperature operation. The local-gate layout enables the integration of multiple devices on a single chip, allowing the realization of 1-, 2-, and 3-transistor circuits that perform various digital logic operations, including an inverter, a NOR gate, a static random-access memory (SRAM) cell, and an ac ring oscillator. The paper also discusses the unique physics of nanotubes, such as the long-range screening of charge, and highlights the potential for further development in nanoelectronics.The paper by Bachtold et al. demonstrates the development of logic circuits using field-effect transistors based on single carbon nanotubes. The device layout features local gates that provide excellent capacitive coupling between the gate and the nanotube, enabling strong electrostatic doping from p-doping to n-doping. This allows for the study of nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors exhibit favorable characteristics such as high gain (>10), a large on-off ratio (>10^8), and room-temperature operation. The local-gate layout enables the integration of multiple devices on a single chip, allowing the realization of 1-, 2-, and 3-transistor circuits that perform various digital logic operations, including an inverter, a NOR gate, a static random-access memory (SRAM) cell, and an ac ring oscillator. The paper also discusses the unique physics of nanotubes, such as the long-range screening of charge, and highlights the potential for further development in nanoelectronics.