The paper reports the fabrication and measurement of propagation and bending losses in single-mode silicon-on-insulator (SOI) strip waveguides with submicron dimensions. The waveguides were fabricated on a standard 200mm CMOS production line, achieving minimal sidewall surface roughness. Key findings include: - **Propagation Losses**: The TE polarization mode exhibited propagation losses of 3.6±0.1dB/cm at the telecommunications wavelength of 1.5μm. - **Bending Losses**: Bending losses were measured to be 0.086±0.005dB per 90° bend for a bending radius of 1μm, and as low as 0.013±0.005dB for a bend radius of 2μm. These results are significant for the development of ultra-dense photonic integrated circuits on a single chip, as they provide a benchmark for further optimization and integration of silicon microphotonic components and circuits. The paper also discusses the experimental setup, design, and fabrication processes, as well as the analysis of the results, including comparisons with existing literature.The paper reports the fabrication and measurement of propagation and bending losses in single-mode silicon-on-insulator (SOI) strip waveguides with submicron dimensions. The waveguides were fabricated on a standard 200mm CMOS production line, achieving minimal sidewall surface roughness. Key findings include: - **Propagation Losses**: The TE polarization mode exhibited propagation losses of 3.6±0.1dB/cm at the telecommunications wavelength of 1.5μm. - **Bending Losses**: Bending losses were measured to be 0.086±0.005dB per 90° bend for a bending radius of 1μm, and as low as 0.013±0.005dB for a bend radius of 2μm. These results are significant for the development of ultra-dense photonic integrated circuits on a single chip, as they provide a benchmark for further optimization and integration of silicon microphotonic components and circuits. The paper also discusses the experimental setup, design, and fabrication processes, as well as the analysis of the results, including comparisons with existing literature.