This study presents a method for growing lanthanum-substituted bismuth ferrite (BLFO) at low temperatures (450°C) on metallic perovskite BaPb₀.₇₅Bi₀.₂₅O₃ (BPBO) electrodes, enabling compatibility with silicon-CMOS integration. Despite a 9% lattice mismatch between BLFO, BPBO, and SrTiO₃ (STO) substrates, all layers in the heterostructures are well-ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping confirms short-range polarization ordering in the low-temperature grown BLFO. Current-voltage, pulsed-switching, fatigue, and retention measurements show characteristics similar to high-temperature grown BLFO, where SrRuO₃ typically serves as the metallic electrode. These results suggest a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and open the door for potential silicon-CMOS integration. Multiferroic materials possess multiple coexisting order parameters, allowing for the effective control of (anti)ferromagnetic order with an electric field or magnetic field control of electrical polarization. These properties make them desirable for applications in magnetic field sensing and novel magnetic memory designs for ultrafast and efficient nonvolatile, in-memory computing. The perovskite bismuth ferrite (BFO) has a robust spontaneous polarization and canted anti-ferromagnetic order, making it one of the most exciting multiferroics. To tune the multiferroic properties of thin-film BFO, rare-earth-cation doping is typically used. The choice of substrate and bottom electrode significantly impacts the multiferroic properties of BFO thin films. Epitaxial BFO and BLFO thin films are typically grown on metallic perovskites at high temperatures, while lattice-matched substrates are used for high-quality growth. However, for device integration, it is essential to select a substrate and growth temperature compatible with silicon-CMOS processing. STO can be deposited epitaxially on silicon substrates, but the high growth temperatures of BFO are incompatible with traditional CMOS processing. The lattice mismatch with CMOS materials leads to challenges in fabrication processes, requiring efforts to process the epitaxial BFO growth on different lattice structures. This study demonstrates highly [001] textured/epitaxial growth of BLFO thin films on BPBO at a substrate heater temperature as low as 450°C on STO substrates. This approach addresses compatibility with CMOS processing and shows promise for practical applications. The electrode system, BPBO, is known for its historical significance as one of the first high transition temperature oxide superconductors. Its normal, metallic state at room temperature is characterized by a resistivity of ~2 mΩ·cm. Recent work onThis study presents a method for growing lanthanum-substituted bismuth ferrite (BLFO) at low temperatures (450°C) on metallic perovskite BaPb₀.₇₅Bi₀.₂₅O₃ (BPBO) electrodes, enabling compatibility with silicon-CMOS integration. Despite a 9% lattice mismatch between BLFO, BPBO, and SrTiO₃ (STO) substrates, all layers in the heterostructures are well-ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping confirms short-range polarization ordering in the low-temperature grown BLFO. Current-voltage, pulsed-switching, fatigue, and retention measurements show characteristics similar to high-temperature grown BLFO, where SrRuO₃ typically serves as the metallic electrode. These results suggest a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and open the door for potential silicon-CMOS integration. Multiferroic materials possess multiple coexisting order parameters, allowing for the effective control of (anti)ferromagnetic order with an electric field or magnetic field control of electrical polarization. These properties make them desirable for applications in magnetic field sensing and novel magnetic memory designs for ultrafast and efficient nonvolatile, in-memory computing. The perovskite bismuth ferrite (BFO) has a robust spontaneous polarization and canted anti-ferromagnetic order, making it one of the most exciting multiferroics. To tune the multiferroic properties of thin-film BFO, rare-earth-cation doping is typically used. The choice of substrate and bottom electrode significantly impacts the multiferroic properties of BFO thin films. Epitaxial BFO and BLFO thin films are typically grown on metallic perovskites at high temperatures, while lattice-matched substrates are used for high-quality growth. However, for device integration, it is essential to select a substrate and growth temperature compatible with silicon-CMOS processing. STO can be deposited epitaxially on silicon substrates, but the high growth temperatures of BFO are incompatible with traditional CMOS processing. The lattice mismatch with CMOS materials leads to challenges in fabrication processes, requiring efforts to process the epitaxial BFO growth on different lattice structures. This study demonstrates highly [001] textured/epitaxial growth of BLFO thin films on BPBO at a substrate heater temperature as low as 450°C on STO substrates. This approach addresses compatibility with CMOS processing and shows promise for practical applications. The electrode system, BPBO, is known for its historical significance as one of the first high transition temperature oxide superconductors. Its normal, metallic state at room temperature is characterized by a resistivity of ~2 mΩ·cm. Recent work on