This study demonstrates the successful growth of lanthanum-substituted bismuth ferrite (La-BiFeO₃) at a low temperature of 450 °C on metallic perovskite BaPb₀.₇₅Bi₀.₂₅O₃ electrodes, overcoming the challenge of high-temperature growth (650–800 °C) required for direct integration with silicon-CMOS platforms. Despite a significant lattice mismatch between La-BiFeO₃, BaPb₀.₇₅Bi₀.₂₅O₃, and SrTiO₃ (001) substrates, all layers in the heterostructures exhibit well-ordered [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping confirms short-range polarization ordering in the low-temperature-grown La-BiFeO₃. Current-voltage, pulsed-switching, fatigue, and retention measurements show characteristics similar to those of high-temperature-grown La-BiFeO₃, where SrRuO₃ serves as the metallic electrode. This work opens a new pathway for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures, potentially enabling silicon-CMOS integration. The study also investigates the role of the bottom electrode as a template for the epitaxial growth of La-BiFeO₃, highlighting the importance of the electrode's crystallinity and low surface energy in facilitating the growth of La-BiFeO₃ at low temperatures.This study demonstrates the successful growth of lanthanum-substituted bismuth ferrite (La-BiFeO₃) at a low temperature of 450 °C on metallic perovskite BaPb₀.₇₅Bi₀.₂₅O₃ electrodes, overcoming the challenge of high-temperature growth (650–800 °C) required for direct integration with silicon-CMOS platforms. Despite a significant lattice mismatch between La-BiFeO₃, BaPb₀.₇₅Bi₀.₂₅O₃, and SrTiO₃ (001) substrates, all layers in the heterostructures exhibit well-ordered [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping confirms short-range polarization ordering in the low-temperature-grown La-BiFeO₃. Current-voltage, pulsed-switching, fatigue, and retention measurements show characteristics similar to those of high-temperature-grown La-BiFeO₃, where SrRuO₃ serves as the metallic electrode. This work opens a new pathway for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures, potentially enabling silicon-CMOS integration. The study also investigates the role of the bottom electrode as a template for the epitaxial growth of La-BiFeO₃, highlighting the importance of the electrode's crystallinity and low surface energy in facilitating the growth of La-BiFeO₃ at low temperatures.