22 Sep 2007 | P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, A. K. Geim
Graphene, a single-atom-thick carbon layer, has been widely studied for its unique properties. However, detecting it visually remains challenging due to its low contrast against surrounding materials. This study investigates the visibility of graphene on SiO₂/Si wafers and shows that it depends strongly on the SiO₂ thickness and light wavelength. Using a Fresnel-based model, the researchers quantitatively describe the experimental data, revealing that the contrast arises not only from increased optical path but also from graphene's opacity.
The visibility of graphene is significantly affected by the SiO₂ thickness and the wavelength of light used. Monochromatic illumination allows for better isolation of graphene, with 300 nm and 100 nm SiO₂ thicknesses being most suitable. The study demonstrates that by using narrow-band filters, graphene can be detected on various SiO₂ thicknesses, including 50 nm Si₃N₄ and 90 nm PMMA. The contrast is defined as the difference in reflected light intensity with and without graphene, and the model accurately predicts this contrast.
The research shows that the contrast can be maximized by selecting appropriate filters for different SiO₂ thicknesses. For example, green light is most comfortable for the human eye and is effective for SiO₂ thicknesses around 90 nm and 280 nm. The study also highlights that the contrast can be used to determine the number of graphene layers, as the contrast changes with the number of layers. The findings provide a quantitative framework for detecting single and multiple layers of graphene and other 2D atomic crystals on various substrates. The results have implications for improving detection techniques and expanding experimental research in the field of graphene and 2D materials.Graphene, a single-atom-thick carbon layer, has been widely studied for its unique properties. However, detecting it visually remains challenging due to its low contrast against surrounding materials. This study investigates the visibility of graphene on SiO₂/Si wafers and shows that it depends strongly on the SiO₂ thickness and light wavelength. Using a Fresnel-based model, the researchers quantitatively describe the experimental data, revealing that the contrast arises not only from increased optical path but also from graphene's opacity.
The visibility of graphene is significantly affected by the SiO₂ thickness and the wavelength of light used. Monochromatic illumination allows for better isolation of graphene, with 300 nm and 100 nm SiO₂ thicknesses being most suitable. The study demonstrates that by using narrow-band filters, graphene can be detected on various SiO₂ thicknesses, including 50 nm Si₃N₄ and 90 nm PMMA. The contrast is defined as the difference in reflected light intensity with and without graphene, and the model accurately predicts this contrast.
The research shows that the contrast can be maximized by selecting appropriate filters for different SiO₂ thicknesses. For example, green light is most comfortable for the human eye and is effective for SiO₂ thicknesses around 90 nm and 280 nm. The study also highlights that the contrast can be used to determine the number of graphene layers, as the contrast changes with the number of layers. The findings provide a quantitative framework for detecting single and multiple layers of graphene and other 2D atomic crystals on various substrates. The results have implications for improving detection techniques and expanding experimental research in the field of graphene and 2D materials.