Graphene encapsulated in hexagonal boron nitride (hBN) exhibits room-temperature ballistic transport over micrometer scales, with high carrier mobility and mean free path. This study demonstrates that such devices, made from graphene sandwiched between two hBN crystals, show pronounced negative bend resistance and an anomalous Hall effect, indicating room-temperature ballistic transport. The encapsulation protects graphene from environmental effects and allows hBN to act as an ultrathin top gate dielectric. The devices exhibit high mobility (up to 500,000 cm²V⁻¹s⁻¹) and mean free path (up to 3 µm) at low carrier concentrations, with longitudinal conductivity limited by boundary scattering rather than bulk scattering. The negative bend resistance is attributed to ballistic transport, with charge carriers reaching the opposite lead without scattering. The study also shows that the Hall resistance exhibits nonlinear behavior with a notable kink at a characteristic magnetic field, indicating ballistic transport. The results suggest that encapsulated graphene can achieve high mobility and long mean free paths, making it a promising material for future electronic applications. The study highlights the importance of improving the electronic quality of graphene, which is commonly characterized by charge carrier mobility. The encapsulation of graphene in hBN provides a stable platform for studying ballistic transport and achieving high mobilities. The results demonstrate that encapsulated graphene can exhibit robust ballistic transport with a mean free path exceeding 3 µm at low temperatures. The study also shows that the longitudinal conductivity of the devices becomes limited by diffusive scattering at the sample boundaries. The demonstrated graphene-boron-nitride heterostructures represent an improvement over previous devices and show the way to achieve high mobilities for graphene on a substrate.Graphene encapsulated in hexagonal boron nitride (hBN) exhibits room-temperature ballistic transport over micrometer scales, with high carrier mobility and mean free path. This study demonstrates that such devices, made from graphene sandwiched between two hBN crystals, show pronounced negative bend resistance and an anomalous Hall effect, indicating room-temperature ballistic transport. The encapsulation protects graphene from environmental effects and allows hBN to act as an ultrathin top gate dielectric. The devices exhibit high mobility (up to 500,000 cm²V⁻¹s⁻¹) and mean free path (up to 3 µm) at low carrier concentrations, with longitudinal conductivity limited by boundary scattering rather than bulk scattering. The negative bend resistance is attributed to ballistic transport, with charge carriers reaching the opposite lead without scattering. The study also shows that the Hall resistance exhibits nonlinear behavior with a notable kink at a characteristic magnetic field, indicating ballistic transport. The results suggest that encapsulated graphene can achieve high mobility and long mean free paths, making it a promising material for future electronic applications. The study highlights the importance of improving the electronic quality of graphene, which is commonly characterized by charge carrier mobility. The encapsulation of graphene in hBN provides a stable platform for studying ballistic transport and achieving high mobilities. The results demonstrate that encapsulated graphene can exhibit robust ballistic transport with a mean free path exceeding 3 µm at low temperatures. The study also shows that the longitudinal conductivity of the devices becomes limited by diffusive scattering at the sample boundaries. The demonstrated graphene-boron-nitride heterostructures represent an improvement over previous devices and show the way to achieve high mobilities for graphene on a substrate.