The paper by B. Radisavljevic and A. Kis investigates the mobility engineering and metal-insulator transition in monolayer MoS₂. Monolayer MoS₂, a two-dimensional (2D) semiconductor, has gained attention due to its direct band gap and potential for high-performance field-effect transistors (FETs). The authors report on electrical transport measurements in MoS₂ FETs with different dielectric configurations, focusing on the temperature dependence of mobility. They find that the presence of a high-k dielectric in dual-gate devices significantly reduces charge impurity scattering, leading to enhanced mobility. Additionally, they observe a metal-insulator transition in monolayer MoS₂, which is attributed to quantum interference effects and weak localization. The study provides insights into the mechanisms governing mobility in 2D semiconductors and suggests that monolayer MoS₂ could be a promising material for advanced electronic devices.The paper by B. Radisavljevic and A. Kis investigates the mobility engineering and metal-insulator transition in monolayer MoS₂. Monolayer MoS₂, a two-dimensional (2D) semiconductor, has gained attention due to its direct band gap and potential for high-performance field-effect transistors (FETs). The authors report on electrical transport measurements in MoS₂ FETs with different dielectric configurations, focusing on the temperature dependence of mobility. They find that the presence of a high-k dielectric in dual-gate devices significantly reduces charge impurity scattering, leading to enhanced mobility. Additionally, they observe a metal-insulator transition in monolayer MoS₂, which is attributed to quantum interference effects and weak localization. The study provides insights into the mechanisms governing mobility in 2D semiconductors and suggests that monolayer MoS₂ could be a promising material for advanced electronic devices.