This study investigates mobility engineering and the metal-insulator transition in monolayer MoS₂. The research focuses on electrical transport measurements in MoS₂ field-effect transistors (FETs) with different dielectric configurations. The mobility of MoS₂ is strongly influenced by charge impurity scattering and phonon scattering, with the former being more significant at lower temperatures. The presence of a high-k dielectric in these devices enhances mobility by reducing Coulomb scattering and modifying phonon dispersion. The study also reports the observation of a metal-insulator transition in monolayer MoS₂, which is a key finding for understanding the behavior of 2D semiconductors. Monolayer MoS₂ is a promising material for 2D electronics due to its direct band gap, which allows for the fabrication of transistors with high on/off ratios. The material's unique electronic and optical properties, including strong spin-valley coupling, make it an interesting system for studying correlation effects in mesoscopic systems. The study also highlights the importance of dielectric environments in controlling the electronic properties of MoS₂, with high-k dielectrics such as HfO₂ playing a crucial role in enhancing mobility and enabling the metal-insulator transition. The research demonstrates that the mobility of monolayer MoS₂ can be significantly improved by using a top-gate dielectric, which reduces charge impurity scattering and enhances electrostatic control. The mobility is found to depend on temperature, with phonon scattering dominating at higher temperatures and charge impurity scattering at lower temperatures. The study also shows that the mobility of MoS₂ can be tuned by adjusting the charge density, with the metal-insulator transition occurring at a specific charge density. The results of this study provide new insights into the mobility behavior of MoS₂ in different configurations and highlight the potential of MoS₂ as a material for future 2D electronic devices. The metal-insulator transition observed in monolayer MoS₂ could be exploited for new types of switches, particularly fast optoelectronic switches based on differences in optical transmission in metallic and insulating states. The study also emphasizes the importance of accurate capacitance measurements in determining the mobility of MoS₂, with the presence of a dielectric layer significantly affecting the capacitance and, consequently, the mobility.This study investigates mobility engineering and the metal-insulator transition in monolayer MoS₂. The research focuses on electrical transport measurements in MoS₂ field-effect transistors (FETs) with different dielectric configurations. The mobility of MoS₂ is strongly influenced by charge impurity scattering and phonon scattering, with the former being more significant at lower temperatures. The presence of a high-k dielectric in these devices enhances mobility by reducing Coulomb scattering and modifying phonon dispersion. The study also reports the observation of a metal-insulator transition in monolayer MoS₂, which is a key finding for understanding the behavior of 2D semiconductors. Monolayer MoS₂ is a promising material for 2D electronics due to its direct band gap, which allows for the fabrication of transistors with high on/off ratios. The material's unique electronic and optical properties, including strong spin-valley coupling, make it an interesting system for studying correlation effects in mesoscopic systems. The study also highlights the importance of dielectric environments in controlling the electronic properties of MoS₂, with high-k dielectrics such as HfO₂ playing a crucial role in enhancing mobility and enabling the metal-insulator transition. The research demonstrates that the mobility of monolayer MoS₂ can be significantly improved by using a top-gate dielectric, which reduces charge impurity scattering and enhances electrostatic control. The mobility is found to depend on temperature, with phonon scattering dominating at higher temperatures and charge impurity scattering at lower temperatures. The study also shows that the mobility of MoS₂ can be tuned by adjusting the charge density, with the metal-insulator transition occurring at a specific charge density. The results of this study provide new insights into the mobility behavior of MoS₂ in different configurations and highlight the potential of MoS₂ as a material for future 2D electronic devices. The metal-insulator transition observed in monolayer MoS₂ could be exploited for new types of switches, particularly fast optoelectronic switches based on differences in optical transmission in metallic and insulating states. The study also emphasizes the importance of accurate capacitance measurements in determining the mobility of MoS₂, with the presence of a dielectric layer significantly affecting the capacitance and, consequently, the mobility.