The paper by T. O. Wehling et al. investigates the molecular doping of graphene, a one-atom thick semiconductor with unique physical properties such as relativistic electron dynamics and ballistic transport. The authors explore the relationship between the doping strength and the magnetic moment of adsorbates, finding that paramagnetic single NO2 molecules act as strong acceptors, while their diamagnetic dimer N2O4 causes only weak doping. This effect is attributed to the linearly vanishing, electron-hole symmetric density of states (DOS) near the Dirac point of graphene, which allows for the formation of quasilocalized impurity states without spin polarization. The study combines experimental Hall measurements with theoretical density functional theory (DFT) calculations to confirm the presence of two distinct types of impurity levels, one close to the Dirac point and the other well below it. These findings provide insights into the control of charge carrier density in graphene, which is crucial for its potential applications in electronics and gas sensing. The strong acceptor level due to single NO2 molecules, associated with the formation of local magnetic moments, is highlighted as a promising candidate for tailoring the electronic and magnetic properties of graphene-based devices.The paper by T. O. Wehling et al. investigates the molecular doping of graphene, a one-atom thick semiconductor with unique physical properties such as relativistic electron dynamics and ballistic transport. The authors explore the relationship between the doping strength and the magnetic moment of adsorbates, finding that paramagnetic single NO2 molecules act as strong acceptors, while their diamagnetic dimer N2O4 causes only weak doping. This effect is attributed to the linearly vanishing, electron-hole symmetric density of states (DOS) near the Dirac point of graphene, which allows for the formation of quasilocalized impurity states without spin polarization. The study combines experimental Hall measurements with theoretical density functional theory (DFT) calculations to confirm the presence of two distinct types of impurity levels, one close to the Dirac point and the other well below it. These findings provide insights into the control of charge carrier density in graphene, which is crucial for its potential applications in electronics and gas sensing. The strong acceptor level due to single NO2 molecules, associated with the formation of local magnetic moments, is highlighted as a promising candidate for tailoring the electronic and magnetic properties of graphene-based devices.