8 Sep 2007 | A. Das1, S. Pisana2, S. Piscanec2, B. Chakraborty1, S. K. Saha1, U. V. Waghmare3, R.Yiang4, H.R.Krishnamurthy1, A. K. Geim4, A. C. Ferrari2, * and A.K. Sood1†
The paper presents a method for electrochemically top-gating graphene using a solid polymer electrolyte, which allows for higher electron and hole doping levels compared to standard back-gating. In-situ Raman spectroscopy is used to monitor the doping process, revealing that the G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows different responses. The 2D peak position increases for hole doping and softens for high electron doping, indicating a non-adiabatic Kohn anomaly at the $\Gamma$ point. The intensity ratio of the G and 2D peaks is a sensitive parameter for monitoring Fermi level shifts. The study also discusses the theoretical and experimental trends in the Raman spectra, confirming the effectiveness of the solid polymer electrolyte for top-gating graphene.The paper presents a method for electrochemically top-gating graphene using a solid polymer electrolyte, which allows for higher electron and hole doping levels compared to standard back-gating. In-situ Raman spectroscopy is used to monitor the doping process, revealing that the G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows different responses. The 2D peak position increases for hole doping and softens for high electron doping, indicating a non-adiabatic Kohn anomaly at the $\Gamma$ point. The intensity ratio of the G and 2D peaks is a sensitive parameter for monitoring Fermi level shifts. The study also discusses the theoretical and experimental trends in the Raman spectra, confirming the effectiveness of the solid polymer electrolyte for top-gating graphene.