6 Feb 2014 | Sefaattin Tongay¹,², Hasan Sahin³, Changhyun Ko², Alex Luce², Wen Fan²,⁴, Kai Liu², Jian Zhou¹,², Ying-Sheng Huang⁵, Ching-Hwa Ho⁵, Jinyuan Yan⁶, D. Frank Ogletree⁷, Shaul Aloni⁷, Jie Ji⁴, Shushen Li¹, Jingbo Li¹, F.M. Peeters³ & Junqiao Wu¹,²,⁸
This study investigates the electronic and vibrational properties of bulk rhenium disulphide (ReS₂), revealing that it behaves as electronically and vibrationally decoupled monolayers. Unlike conventional transition metal dichalcogenides (TMDs), where the bandgap changes from indirect to direct with monolayer thickness, ReS₂ maintains a direct bandgap across all layers. This unique behavior is attributed to the Peierls distortion in the 1T structure of ReS₂, which prevents ordered stacking and minimizes interlayer wavefunction overlap. As a result, ReS₂ exhibits no thickness dependence in its Raman spectrum and optical absorption, and its photoluminescence intensity increases with layer thickness. The interlayer coupling is further demonstrated by the insensitivity of optical absorption and Raman spectrum to interlayer distance modulated by hydrostatic pressure. Theoretical calculations support the decoupling mechanism, showing that the interlayer coupling energy in ReS₂ is significantly weaker than in MoS₂. The study highlights ReS₂ as a new member of the TMD family with distinct physical properties, offering a platform for exploring two-dimensional-like systems without the need for monolayers. The results have implications for the development of flexible optoelectronics and photovoltaics.This study investigates the electronic and vibrational properties of bulk rhenium disulphide (ReS₂), revealing that it behaves as electronically and vibrationally decoupled monolayers. Unlike conventional transition metal dichalcogenides (TMDs), where the bandgap changes from indirect to direct with monolayer thickness, ReS₂ maintains a direct bandgap across all layers. This unique behavior is attributed to the Peierls distortion in the 1T structure of ReS₂, which prevents ordered stacking and minimizes interlayer wavefunction overlap. As a result, ReS₂ exhibits no thickness dependence in its Raman spectrum and optical absorption, and its photoluminescence intensity increases with layer thickness. The interlayer coupling is further demonstrated by the insensitivity of optical absorption and Raman spectrum to interlayer distance modulated by hydrostatic pressure. Theoretical calculations support the decoupling mechanism, showing that the interlayer coupling energy in ReS₂ is significantly weaker than in MoS₂. The study highlights ReS₂ as a new member of the TMD family with distinct physical properties, offering a platform for exploring two-dimensional-like systems without the need for monolayers. The results have implications for the development of flexible optoelectronics and photovoltaics.