This study investigates the use of mechanically exfoliated multilayer WS₂ flakes as the channel material for field-effect transistors (FETs) in low-power photodetection across the visible and near-infrared (NIR) spectral ranges. The electrical characterization reveals n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS₂ phototransistors can operate in self-powered mode, generating both current and voltage when exposed to light. The spectral photoresponse shows high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications. The study also explores the optoelectronic properties of the devices, including their performance at different incident laser powers and in the visible and NIR regions. The results demonstrate that the WS₂ device exhibits high responsivity and specific detectivity, making it a promising candidate for optical telecommunications.This study investigates the use of mechanically exfoliated multilayer WS₂ flakes as the channel material for field-effect transistors (FETs) in low-power photodetection across the visible and near-infrared (NIR) spectral ranges. The electrical characterization reveals n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS₂ phototransistors can operate in self-powered mode, generating both current and voltage when exposed to light. The spectral photoresponse shows high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications. The study also explores the optoelectronic properties of the devices, including their performance at different incident laser powers and in the visible and NIR regions. The results demonstrate that the WS₂ device exhibits high responsivity and specific detectivity, making it a promising candidate for optical telecommunications.