This study investigates the multiresistance states in ferro- and antiferroelectric trilayer boron nitride (BN). By stacking three BN layers, the researchers observed both ferro- and antiferroelectric domains within the same sample. These domains can be switched layer-by-layer, producing multiple resistance states. The switching behavior is influenced by the interaction between the trilayer BN and a graphene substrate. Theoretical calculations using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods reveal that the internal polarization of the trilayer BN and the presence of the graphite substrate play crucial roles in the observed resistance states. The findings highlight the potential of 2D sliding ferroelectric materials for novel applications such as multi-valued memories.This study investigates the multiresistance states in ferro- and antiferroelectric trilayer boron nitride (BN). By stacking three BN layers, the researchers observed both ferro- and antiferroelectric domains within the same sample. These domains can be switched layer-by-layer, producing multiple resistance states. The switching behavior is influenced by the interaction between the trilayer BN and a graphene substrate. Theoretical calculations using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods reveal that the internal polarization of the trilayer BN and the presence of the graphite substrate play crucial roles in the observed resistance states. The findings highlight the potential of 2D sliding ferroelectric materials for novel applications such as multi-valued memories.