This study reports the discovery of ferro- and antiferroelectric domains in trilayer boron nitride (BN), which can be switched layer-by-layer to produce multiple resistance states. The research demonstrates that trilayer BN, when used as a tunneling junction, can exhibit rich polarization states and switching behaviors. Theoretical calculations reveal that the interaction between trilayer BN and a graphene substrate plays a crucial role in the observed resistance states. The study shows that the polarization states in trilayer BN can be manipulated by an external electric field, leading to different resistance states. The results indicate that the polarization at the lower interface dominates the tunneling process, and the interaction between the BN and graphene substrate is essential for the observed behavior. The findings suggest that trilayer BN could be used in novel devices such as multi-state memories. The study also highlights the importance of the interaction between the BN and graphene substrate in determining the electronic properties of the system. The research provides insights into the behavior of sliding ferroelectric materials and their potential applications in future electronic devices. The results are supported by both experimental and theoretical investigations, showing that the rich resistance states arise not only from the polarization within the BN layers but also from the interaction between BN and the graphene substrate. The study demonstrates the flexibility of sliding ferroelectric systems and their potential for future applications in multi-state memory devices.This study reports the discovery of ferro- and antiferroelectric domains in trilayer boron nitride (BN), which can be switched layer-by-layer to produce multiple resistance states. The research demonstrates that trilayer BN, when used as a tunneling junction, can exhibit rich polarization states and switching behaviors. Theoretical calculations reveal that the interaction between trilayer BN and a graphene substrate plays a crucial role in the observed resistance states. The study shows that the polarization states in trilayer BN can be manipulated by an external electric field, leading to different resistance states. The results indicate that the polarization at the lower interface dominates the tunneling process, and the interaction between the BN and graphene substrate is essential for the observed behavior. The findings suggest that trilayer BN could be used in novel devices such as multi-state memories. The study also highlights the importance of the interaction between the BN and graphene substrate in determining the electronic properties of the system. The research provides insights into the behavior of sliding ferroelectric materials and their potential applications in future electronic devices. The results are supported by both experimental and theoretical investigations, showing that the rich resistance states arise not only from the polarization within the BN layers but also from the interaction between BN and the graphene substrate. The study demonstrates the flexibility of sliding ferroelectric systems and their potential for future applications in multi-state memory devices.