This article reports the development of a nanofluidic device designed for circuit-scale in-memory processing, aiming to mimic the brain's energy-efficient information processing using ions. The device, fabricated using a scalable process, combines single-digit nanometric confinement and large entrance asymmetry, operating on the second timescale with a conductance ratio ranging from 9 to 60. Optical microscopy reveals that the memory capabilities arise from the reversible formation of liquid blisters, which modulate the device's conductance. These mechano-ionic memristive switches are used to assemble logic circuits composed of two interactive devices and an ohmic resistor. The study demonstrates the successful fabrication of scalable nanofluidic switches with excellent performance, operating effectively using simple monovalent salt solutions within the electrochemical window of water. The memory effect is attributed to the reversible mechanical deformation induced by converging counter-ion fluxes, resulting in a charge threshold for switching. The device's fast speed, large conductance ratio, and conditional switching capabilities enable the implementation of logic operations, marking a significant step towards building neuromorphic nanofluidic circuits.This article reports the development of a nanofluidic device designed for circuit-scale in-memory processing, aiming to mimic the brain's energy-efficient information processing using ions. The device, fabricated using a scalable process, combines single-digit nanometric confinement and large entrance asymmetry, operating on the second timescale with a conductance ratio ranging from 9 to 60. Optical microscopy reveals that the memory capabilities arise from the reversible formation of liquid blisters, which modulate the device's conductance. These mechano-ionic memristive switches are used to assemble logic circuits composed of two interactive devices and an ohmic resistor. The study demonstrates the successful fabrication of scalable nanofluidic switches with excellent performance, operating effectively using simple monovalent salt solutions within the electrochemical window of water. The memory effect is attributed to the reversible mechanical deformation induced by converging counter-ion fluxes, resulting in a charge threshold for switching. The device's fast speed, large conductance ratio, and conditional switching capabilities enable the implementation of logic operations, marking a significant step towards building neuromorphic nanofluidic circuits.