The article discusses the formation of solid-state nanotubes from thin films of various materials. Two methods are described: a "general" method involving selective etching to create nanotubes with precise control over their position and thickness, and a "specialized" method that uses a bilayer of different materials to form nanotubes along specific edges. The technique allows for the creation of nanotubes with diameters ranging from 50 nm to 530 nm, and lengths up to 20 μm. These nanotubes can be made from a wide range of materials, including silicon-germanium, indium, gallium, and arsenic. The versatility and control offered by this method make solid-state nanotubes suitable for applications such as fluid transportation, capillarity studies, and fundamental research in nanoelectronics.The article discusses the formation of solid-state nanotubes from thin films of various materials. Two methods are described: a "general" method involving selective etching to create nanotubes with precise control over their position and thickness, and a "specialized" method that uses a bilayer of different materials to form nanotubes along specific edges. The technique allows for the creation of nanotubes with diameters ranging from 50 nm to 530 nm, and lengths up to 20 μm. These nanotubes can be made from a wide range of materials, including silicon-germanium, indium, gallium, and arsenic. The versatility and control offered by this method make solid-state nanotubes suitable for applications such as fluid transportation, capillarity studies, and fundamental research in nanoelectronics.