This review article discusses the emerging ferroelectric AlScN materials, focusing on their ferroelectricity, domain dynamics, and performance optimization. The article highlights the potential of AlScN in non-volatile memory and in-memory computing applications, addressing the challenges and perspectives for commercialization. Key points include: 1. **Ferroelectricity and Domain Dynamics**: The review covers the mechanisms of ferroelectricity and domain dynamics in AlScN films, emphasizing the role of Sc doping in reducing the polarization switching barrier and enhancing ferroelectric properties. 2. **Performance Optimization**: The article summarizes the performance optimization of AlScN films grown by different deposition techniques, such as magnetron sputtering (MS), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). Each technique is evaluated based on its advantages and limitations in terms of film quality, uniformity, and cost. 3. **Applications in Memory and Computing**: The review explores the potential of AlScN in various memory devices, including ferroelectric random-access memory (FeRAM), ferroelectric diodes (FeD), ferroelectric tunnel junctions (FTJ), and ferroelectric field-effect transistors (FeFETs). It discusses the advantages of AlScN in terms of high remanent polarization (Pr), low coercive electric field (Ec), and low permittivity, which are crucial for improving memory performance and reducing power consumption. 4. **Challenges and Perspectives**: The article concludes by discussing the challenges and future prospects for commercializing AlScN-based memory devices, including issues related to device uniformity, scalability, and integration with CMOS technology. It emphasizes the need for further research to optimize the properties of AlScN films and address the limitations of current deposition techniques. Overall, the review provides a comprehensive overview of the current state and future potential of AlScN as a promising material for advanced memory and computing applications.This review article discusses the emerging ferroelectric AlScN materials, focusing on their ferroelectricity, domain dynamics, and performance optimization. The article highlights the potential of AlScN in non-volatile memory and in-memory computing applications, addressing the challenges and perspectives for commercialization. Key points include: 1. **Ferroelectricity and Domain Dynamics**: The review covers the mechanisms of ferroelectricity and domain dynamics in AlScN films, emphasizing the role of Sc doping in reducing the polarization switching barrier and enhancing ferroelectric properties. 2. **Performance Optimization**: The article summarizes the performance optimization of AlScN films grown by different deposition techniques, such as magnetron sputtering (MS), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). Each technique is evaluated based on its advantages and limitations in terms of film quality, uniformity, and cost. 3. **Applications in Memory and Computing**: The review explores the potential of AlScN in various memory devices, including ferroelectric random-access memory (FeRAM), ferroelectric diodes (FeD), ferroelectric tunnel junctions (FTJ), and ferroelectric field-effect transistors (FeFETs). It discusses the advantages of AlScN in terms of high remanent polarization (Pr), low coercive electric field (Ec), and low permittivity, which are crucial for improving memory performance and reducing power consumption. 4. **Challenges and Perspectives**: The article concludes by discussing the challenges and future prospects for commercializing AlScN-based memory devices, including issues related to device uniformity, scalability, and integration with CMOS technology. It emphasizes the need for further research to optimize the properties of AlScN films and address the limitations of current deposition techniques. Overall, the review provides a comprehensive overview of the current state and future potential of AlScN as a promising material for advanced memory and computing applications.