The article reports the synthesis and characterization of a novel two-dimensional (2D) crystal, C2N-h2D, which features evenly distributed holes and nitrogen atoms in its basal plane. This material is synthesized through a simple wet-chemical reaction and characterized using various techniques, including scanning tunneling microscopy (STM). The C2N-h2D crystal exhibits a direct bandgap of approximately 1.96 eV, with a calculated bandgap of 1.70 eV, making it a promising semiconductor. Field-effect transistors (FETs) fabricated using this material show an on/off ratio of 10^7, confirming its semiconducting nature. The unique structure and properties of C2N-h2D make it a potential candidate for applications in electronics, sensors, and catalysis, offering complementary features to graphene and hexagonal boron nitride (h-BN). The simplicity and efficiency of the synthesis method, along with the solution processability, highlight the material's potential for practical use.The article reports the synthesis and characterization of a novel two-dimensional (2D) crystal, C2N-h2D, which features evenly distributed holes and nitrogen atoms in its basal plane. This material is synthesized through a simple wet-chemical reaction and characterized using various techniques, including scanning tunneling microscopy (STM). The C2N-h2D crystal exhibits a direct bandgap of approximately 1.96 eV, with a calculated bandgap of 1.70 eV, making it a promising semiconductor. Field-effect transistors (FETs) fabricated using this material show an on/off ratio of 10^7, confirming its semiconducting nature. The unique structure and properties of C2N-h2D make it a potential candidate for applications in electronics, sensors, and catalysis, offering complementary features to graphene and hexagonal boron nitride (h-BN). The simplicity and efficiency of the synthesis method, along with the solution processability, highlight the material's potential for practical use.