A nitrogenated holey two-dimensional (2D) crystal, C₂N-h2D, has been synthesized through a simple wet-chemical reaction. This material features evenly distributed holes and nitrogen atoms in its basal plane with a C₂N stoichiometry. The structure was confirmed using various techniques, including scanning tunneling microscopy (STM), and exhibits a bandgap of approximately 1.70 eV (calculated) and 1.96 eV (experimental). A field-effect transistor (FET) fabricated from this material shows an on/off ratio of 10⁷, confirming its semiconducting nature. The material's unique structure, with uniform holes and nitrogen atoms, allows for a wider bandgap compared to graphene, making it suitable for semiconductor applications. The C₂N-h2D crystal has a layered structure with a narrow interlayer distance (0.328 nm), attributed to the presence of nitrogen atoms and holes. It is highly crystalline, with a high thermal stability and a large specific surface area. The crystal exhibits sp² hybridization and has a semiconducting bandgap of approximately 1.96 eV. The FET device demonstrates excellent electrical properties, with a high on/off current ratio. The material's unique electronic structure, with flat bands near the band edges, suggests potential for tunable electronic properties. The synthesis method is simple and efficient, making it suitable for practical applications. The C₂N-h2D crystal offers new opportunities in materials science and technology, with potential applications in electronics, sensors, and catalysis. It complements graphene and hexagonal boron nitride (h-BN) in various applications. The study highlights the potential of nitrogenated holey 2D materials for future technological developments.A nitrogenated holey two-dimensional (2D) crystal, C₂N-h2D, has been synthesized through a simple wet-chemical reaction. This material features evenly distributed holes and nitrogen atoms in its basal plane with a C₂N stoichiometry. The structure was confirmed using various techniques, including scanning tunneling microscopy (STM), and exhibits a bandgap of approximately 1.70 eV (calculated) and 1.96 eV (experimental). A field-effect transistor (FET) fabricated from this material shows an on/off ratio of 10⁷, confirming its semiconducting nature. The material's unique structure, with uniform holes and nitrogen atoms, allows for a wider bandgap compared to graphene, making it suitable for semiconductor applications. The C₂N-h2D crystal has a layered structure with a narrow interlayer distance (0.328 nm), attributed to the presence of nitrogen atoms and holes. It is highly crystalline, with a high thermal stability and a large specific surface area. The crystal exhibits sp² hybridization and has a semiconducting bandgap of approximately 1.96 eV. The FET device demonstrates excellent electrical properties, with a high on/off current ratio. The material's unique electronic structure, with flat bands near the band edges, suggests potential for tunable electronic properties. The synthesis method is simple and efficient, making it suitable for practical applications. The C₂N-h2D crystal offers new opportunities in materials science and technology, with potential applications in electronics, sensors, and catalysis. It complements graphene and hexagonal boron nitride (h-BN) in various applications. The study highlights the potential of nitrogenated holey 2D materials for future technological developments.