February 2, 2008 | Yaroslav Tserkovnyak,1 Arne Brataas,2 Gerrit E. W. Bauer,3 and Bertrand I. Halperin4
The article reviews recent progress in understanding the magnetization dynamics in ferromagnetic heterostructures, focusing on the role of spin pumping and spin-flip relaxation. The authors discuss the nonlocal exchange coupling and giant magnetoresistance (GMR) in ferromagnetic multilayers, the Landau-Lifshitz-Gilbert (LLG) phenomenology for magnetization dynamics, and the current-induced magnetization dynamics. They also explore the spin emission by coherently precessing ferromagnets and the Gilbert damping enhancement. The formalism is derived from microscopic principles and is applicable to quasi-one-dimensional models, such as layered pillar structures. The review covers both theoretical developments and experimental confirmations, highlighting the importance of spin-orbit coupling and electron-electron interactions. The authors conclude by discussing the implications of these findings for the design of small devices like magnetic random-access memory elements.The article reviews recent progress in understanding the magnetization dynamics in ferromagnetic heterostructures, focusing on the role of spin pumping and spin-flip relaxation. The authors discuss the nonlocal exchange coupling and giant magnetoresistance (GMR) in ferromagnetic multilayers, the Landau-Lifshitz-Gilbert (LLG) phenomenology for magnetization dynamics, and the current-induced magnetization dynamics. They also explore the spin emission by coherently precessing ferromagnets and the Gilbert damping enhancement. The formalism is derived from microscopic principles and is applicable to quasi-one-dimensional models, such as layered pillar structures. The review covers both theoretical developments and experimental confirmations, highlighting the importance of spin-orbit coupling and electron-electron interactions. The authors conclude by discussing the implications of these findings for the design of small devices like magnetic random-access memory elements.