A two-terminal nonvolatile and reconfigurable electro-optic duplex memristor based on III-nitride semiconductors has been developed. The device is a Schottky diode based on a GaN/AlScN heterostructure, where the i-GaN layer provides photosensitivity and the AlScN layer provides storage characteristics. The memristor exhibits excellent electrical and opto-electrical nonvolatility and reconfigurability, with a current on/off ratio of up to $10^4$. The resistance states can be effectively reset, written, and long-termly stored. At electrical mode, the resistance state change is due to the ferroelectric polarization inversion of the AlScN layer, which influences the depletion region width and electron transport barrier height. At opto-electrical mode, the memory window is controlled by the illuminating light intensity due to the photoconductive effect of the i-GaN layer and the photoinduced electron transport barrier reduction effect, which can regulate the partial bias applied to the AlScN layer. Based on this device, the "IMP" truth table and the logic "False" can be successfully reproduced, indicating the huge potential of the device in the field of in-memory sensing and computing. The device is fabricated using a standard III-nitride based device fabrication process. The structure is grown on a c-oriented sapphire substrate by MOCVD. The AlScN layer is grown by RF-reactive magnetron sputtering. The device is made by standard III-nitride semiconductor device fabrication process, including the deposition of electrodes and the formation of Schottky contact. The device is characterized using various techniques, including TEM, STEM, XRD, and PFM. The device exhibits excellent nonvolatility and reconfigurability, with the ability to store and process information in-memory. The device can be operated in three modes: electrical-electrical (E-E), optical-electrical (O-E), and optical-optical (O-O). The device can perform in-memory sensing and computing operations, including the "IMP" truth table and the logic "False". The device has a two-terminal configuration, which is beneficial for large-scale integration applications. The device is based on III-nitrides, which have wide application range and high industrial maturity, making it suitable for mass production and application. The device relies on the interaction between one part of the structure and the illuminating light to induce the other ferroelectric part to generate polarization inversion, providing a new direction for device structure design. The device has the potential to realize high-performance memristors for in-memory sensing and computing.A two-terminal nonvolatile and reconfigurable electro-optic duplex memristor based on III-nitride semiconductors has been developed. The device is a Schottky diode based on a GaN/AlScN heterostructure, where the i-GaN layer provides photosensitivity and the AlScN layer provides storage characteristics. The memristor exhibits excellent electrical and opto-electrical nonvolatility and reconfigurability, with a current on/off ratio of up to $10^4$. The resistance states can be effectively reset, written, and long-termly stored. At electrical mode, the resistance state change is due to the ferroelectric polarization inversion of the AlScN layer, which influences the depletion region width and electron transport barrier height. At opto-electrical mode, the memory window is controlled by the illuminating light intensity due to the photoconductive effect of the i-GaN layer and the photoinduced electron transport barrier reduction effect, which can regulate the partial bias applied to the AlScN layer. Based on this device, the "IMP" truth table and the logic "False" can be successfully reproduced, indicating the huge potential of the device in the field of in-memory sensing and computing. The device is fabricated using a standard III-nitride based device fabrication process. The structure is grown on a c-oriented sapphire substrate by MOCVD. The AlScN layer is grown by RF-reactive magnetron sputtering. The device is made by standard III-nitride semiconductor device fabrication process, including the deposition of electrodes and the formation of Schottky contact. The device is characterized using various techniques, including TEM, STEM, XRD, and PFM. The device exhibits excellent nonvolatility and reconfigurability, with the ability to store and process information in-memory. The device can be operated in three modes: electrical-electrical (E-E), optical-electrical (O-E), and optical-optical (O-O). The device can perform in-memory sensing and computing operations, including the "IMP" truth table and the logic "False". The device has a two-terminal configuration, which is beneficial for large-scale integration applications. The device is based on III-nitrides, which have wide application range and high industrial maturity, making it suitable for mass production and application. The device relies on the interaction between one part of the structure and the illuminating light to induce the other ferroelectric part to generate polarization inversion, providing a new direction for device structure design. The device has the potential to realize high-performance memristors for in-memory sensing and computing.