This paper presents the development of a nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on a GaN/AlScN heterostructure. The device, which is an n-GaN/i-GaN/AlScN Schottky diode, demonstrates excellent electrical and opto-electrical nonvolatility and reconfigurability. For both electrical and opto-electrical modes, the current on/off ratio reaches \(10^4\), and the resistance states can be effectively reset, written, and long-termly stored. The device's resistance state change in the electrical mode is attributed to the ferroelectric polarization inversion of the AlScN layer, affecting the depletion region width and electron transport barrier height. In the opto-electrical mode, the memory window is controlled by the illuminating light intensity due to the photoconductive effect of the i-GaN layer and the photo-induced electron transport barrier reduction effect. The device successfully reproduces the "IMP" truth table and the logic "False," indicating its potential in in-memory sensing and computing. The study highlights the advantages of the device, including its dual-working mode, two-terminal configuration, and the potential for mass production and application due to the wide application range and high industrial maturity of III-nitrides. However, challenges such as polycrystalline ferroelectric domains and limited to binary calculations remain to be addressed.This paper presents the development of a nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on a GaN/AlScN heterostructure. The device, which is an n-GaN/i-GaN/AlScN Schottky diode, demonstrates excellent electrical and opto-electrical nonvolatility and reconfigurability. For both electrical and opto-electrical modes, the current on/off ratio reaches \(10^4\), and the resistance states can be effectively reset, written, and long-termly stored. The device's resistance state change in the electrical mode is attributed to the ferroelectric polarization inversion of the AlScN layer, affecting the depletion region width and electron transport barrier height. In the opto-electrical mode, the memory window is controlled by the illuminating light intensity due to the photoconductive effect of the i-GaN layer and the photo-induced electron transport barrier reduction effect. The device successfully reproduces the "IMP" truth table and the logic "False," indicating its potential in in-memory sensing and computing. The study highlights the advantages of the device, including its dual-working mode, two-terminal configuration, and the potential for mass production and application due to the wide application range and high industrial maturity of III-nitrides. However, challenges such as polycrystalline ferroelectric domains and limited to binary calculations remain to be addressed.