This study presents a nonvolatile memory cell based on a MoS₂/graphene heterostructure. The device utilizes a monolayer MoS₂ as a channel and graphene as electrodes in a field-effect transistor configuration. A multilayer graphene (MLG) floating gate is integrated to enable nonvolatile memory operation. The unique electronic properties of MoS₂ and the high conductivity of graphene allow for a 2D heterostructure with high sensitivity to charge in the MLG layer, resulting in a 10⁴ difference between memory program and erase states. The 2D nature of the structure enables flexible, large-scale integration. The device is fabricated using three transfer steps: CVD graphene, mechanically exfoliated MoS₂, and MLG. The MoS₂ is transferred onto a graphene stripe array, and a tunneling oxide layer is deposited. MLG is then transferred onto the oxide layer as a floating gate, followed by a blocking oxide layer. The device is characterized by measuring drain-source current vs. gate voltage, showing a large hysteresis of ~8 V, indicating charge trapping in the MLG. A positive control gate voltage induces Fowler-Nordheim tunneling, programming the device, while a negative voltage erases it. The device exhibits a program/erase current ratio exceeding 10⁴, enabling multilevel storage. The memory device demonstrates excellent charge retention, with 30% of the initial charge remaining after 10 years. The device's performance is attributed to the high density of states in MLG, allowing for a large memory window. The device's dynamic behavior is tested, showing stable program and erase states over 120 cycles. The study highlights the potential of 2D materials for nonvolatile memory applications, with the MoS₂/MLG heterostructure showing promise for flexible, scalable, and low-power memory devices. The results suggest that further optimization of the blocking oxide layer could enhance performance.This study presents a nonvolatile memory cell based on a MoS₂/graphene heterostructure. The device utilizes a monolayer MoS₂ as a channel and graphene as electrodes in a field-effect transistor configuration. A multilayer graphene (MLG) floating gate is integrated to enable nonvolatile memory operation. The unique electronic properties of MoS₂ and the high conductivity of graphene allow for a 2D heterostructure with high sensitivity to charge in the MLG layer, resulting in a 10⁴ difference between memory program and erase states. The 2D nature of the structure enables flexible, large-scale integration. The device is fabricated using three transfer steps: CVD graphene, mechanically exfoliated MoS₂, and MLG. The MoS₂ is transferred onto a graphene stripe array, and a tunneling oxide layer is deposited. MLG is then transferred onto the oxide layer as a floating gate, followed by a blocking oxide layer. The device is characterized by measuring drain-source current vs. gate voltage, showing a large hysteresis of ~8 V, indicating charge trapping in the MLG. A positive control gate voltage induces Fowler-Nordheim tunneling, programming the device, while a negative voltage erases it. The device exhibits a program/erase current ratio exceeding 10⁴, enabling multilevel storage. The memory device demonstrates excellent charge retention, with 30% of the initial charge remaining after 10 years. The device's performance is attributed to the high density of states in MLG, allowing for a large memory window. The device's dynamic behavior is tested, showing stable program and erase states over 120 cycles. The study highlights the potential of 2D materials for nonvolatile memory applications, with the MoS₂/MLG heterostructure showing promise for flexible, scalable, and low-power memory devices. The results suggest that further optimization of the blocking oxide layer could enhance performance.