The paper presents a novel approach to nonvolatile memory cells using a 2D heterostructure of monolayer MoS₂ and graphene. The unique electronic properties of semiconducting monolayer MoS₂, combined with the high conductivity of graphene, form a field-effect transistor geometry capable of information storage. The device is further integrated with a multilayer graphene charge trapping layer, enabling it to function as a nonvolatile memory cell. The band gap and 2D nature of monolayer MoS₂ make it highly sensitive to charges in the charge trapping layer, resulting in a significant difference between the memory program and erase states. The two-dimensional nature of the contact and channel allows for the fabrication of flexible nanoelectronic devices with large-scale integration. The device's performance is comparable to similar devices with metal contacts, and its excellent mechanical properties make it suitable for flexible substrate applications. The study demonstrates the potential of 2D materials in memory devices, offering advantages such as reduced power dissipation and improved charge retention.The paper presents a novel approach to nonvolatile memory cells using a 2D heterostructure of monolayer MoS₂ and graphene. The unique electronic properties of semiconducting monolayer MoS₂, combined with the high conductivity of graphene, form a field-effect transistor geometry capable of information storage. The device is further integrated with a multilayer graphene charge trapping layer, enabling it to function as a nonvolatile memory cell. The band gap and 2D nature of monolayer MoS₂ make it highly sensitive to charges in the charge trapping layer, resulting in a significant difference between the memory program and erase states. The two-dimensional nature of the contact and channel allows for the fabrication of flexible nanoelectronic devices with large-scale integration. The device's performance is comparable to similar devices with metal contacts, and its excellent mechanical properties make it suitable for flexible substrate applications. The study demonstrates the potential of 2D materials in memory devices, offering advantages such as reduced power dissipation and improved charge retention.