Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

11 April 2013 | Hualing Zeng, Gui-Bin Liu, Junfeng Dai, Yajun Yan, Bairen Zhu, Ruicong He, Lu Xie, Shijie Xu, Xianhui Chen, Wang Yao, Xiaodong Cui
This study reports systematic optical investigations of monolayers and multilayers of WS₂ and WSe₂. The second harmonic generation (SHG) efficiency exhibits a dramatic even-odd oscillation with the number of layers, consistent with the presence or absence of inversion symmetry in even or odd layers. Photoluminescence (PL) measurements show a transition from an indirect band gap semiconductor in multilayers to a direct-gap one in monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness-independent splitting pattern is due to giant spin-valley coupling, which suppresses interlayer hopping at the valence band edge near K points. The study also explores the optical properties of WS₂ and WSe₂ using Raman scattering, SHG, and PL. Raman spectra reveal the presence of specific vibrational modes, with the A₁g mode showing a blue shift with increasing layer number. SHG measurements show a dramatic even-odd oscillation, with negligible SHG in even-layer samples and strong emission in odd-layer samples. PL measurements confirm the transition from indirect to direct band gap and show a significant increase in PL quantum efficiency in monolayers. The A-B splitting is consistent across all layers and is attributed to spin-valley coupling. Ab initio calculations confirm that the A-B splitting is due to giant spin-valley coupling, which suppresses interlayer hopping. This coupling leads to a spin-split valence band edge at K points, with a splitting magnitude of ~0.4 eV. The spin-valley coupling also results in a suppression of interlayer hopping, leading to a uniform splitting pattern across all layers. The study highlights the unique properties of WS₂ and WSe₂, including their spin-valley coupling and potential for spintronics applications. The results demonstrate the importance of symmetry variations and spin-valley coupling in determining the optical and electronic properties of atomically thin tungsten dichalcogenides.This study reports systematic optical investigations of monolayers and multilayers of WS₂ and WSe₂. The second harmonic generation (SHG) efficiency exhibits a dramatic even-odd oscillation with the number of layers, consistent with the presence or absence of inversion symmetry in even or odd layers. Photoluminescence (PL) measurements show a transition from an indirect band gap semiconductor in multilayers to a direct-gap one in monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness-independent splitting pattern is due to giant spin-valley coupling, which suppresses interlayer hopping at the valence band edge near K points. The study also explores the optical properties of WS₂ and WSe₂ using Raman scattering, SHG, and PL. Raman spectra reveal the presence of specific vibrational modes, with the A₁g mode showing a blue shift with increasing layer number. SHG measurements show a dramatic even-odd oscillation, with negligible SHG in even-layer samples and strong emission in odd-layer samples. PL measurements confirm the transition from indirect to direct band gap and show a significant increase in PL quantum efficiency in monolayers. The A-B splitting is consistent across all layers and is attributed to spin-valley coupling. Ab initio calculations confirm that the A-B splitting is due to giant spin-valley coupling, which suppresses interlayer hopping. This coupling leads to a spin-split valence band edge at K points, with a splitting magnitude of ~0.4 eV. The spin-valley coupling also results in a suppression of interlayer hopping, leading to a uniform splitting pattern across all layers. The study highlights the unique properties of WS₂ and WSe₂, including their spin-valley coupling and potential for spintronics applications. The results demonstrate the importance of symmetry variations and spin-valley coupling in determining the optical and electronic properties of atomically thin tungsten dichalcogenides.
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