This study reports direct optical control of oscillatory neuron behavior in oxide-based memristors, specifically in V3O5 devices. The devices exhibit electroforming-free operation with switching parameters that can be tuned by optical illumination. The changes in switching parameters, including threshold and hold voltages, arise from overall conductivity increase of the oxide film due to the contribution of both photoconductive and bolometric characteristics of V3O5, which eventually affects the oscillation dynamics. V3O5 is identified as a new bolometric material with a temperature coefficient of resistance (TCR) as high as -4.6% K⁻¹ at 423 K. The utility of these devices is illustrated by demonstrating in-sensor reservoir computing with reduced computational effort and an optical encoding layer for spiking neural network (SNN), respectively, using a simulated array of devices. The study shows that the threshold and hold voltages and the oscillation frequency are regulated by illumination intensity and light wavelength due to a photoinduced decrease of device resistance. This is mediated by the photoconductive and bolometric nature of the V3O5 film. Additionally, using temperature-dependent resistance measurements, a new bolometric material (V3O5) with a TCR value as high as -4.6% K⁻¹ at 423 K is reported. The devices are used to demonstrate the effectiveness of optically tuned dynamical photoresponse and oscillation dynamics in performing reservoir computing with reduced computational effort and image segmentation. The demonstration of photoresponse and optically controlled oscillation dynamics without an external photodetector could be of use in the development of scalable, compact, and power-efficient devices enabling direct optical input in SNNs, important for autonomous driving and robotic vision.This study reports direct optical control of oscillatory neuron behavior in oxide-based memristors, specifically in V3O5 devices. The devices exhibit electroforming-free operation with switching parameters that can be tuned by optical illumination. The changes in switching parameters, including threshold and hold voltages, arise from overall conductivity increase of the oxide film due to the contribution of both photoconductive and bolometric characteristics of V3O5, which eventually affects the oscillation dynamics. V3O5 is identified as a new bolometric material with a temperature coefficient of resistance (TCR) as high as -4.6% K⁻¹ at 423 K. The utility of these devices is illustrated by demonstrating in-sensor reservoir computing with reduced computational effort and an optical encoding layer for spiking neural network (SNN), respectively, using a simulated array of devices. The study shows that the threshold and hold voltages and the oscillation frequency are regulated by illumination intensity and light wavelength due to a photoinduced decrease of device resistance. This is mediated by the photoconductive and bolometric nature of the V3O5 film. Additionally, using temperature-dependent resistance measurements, a new bolometric material (V3O5) with a TCR value as high as -4.6% K⁻¹ at 423 K is reported. The devices are used to demonstrate the effectiveness of optically tuned dynamical photoresponse and oscillation dynamics in performing reservoir computing with reduced computational effort and image segmentation. The demonstration of photoresponse and optically controlled oscillation dynamics without an external photodetector could be of use in the development of scalable, compact, and power-efficient devices enabling direct optical input in SNNs, important for autonomous driving and robotic vision.