Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells

Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells

2016.10(11) | Nana Wang, Lu Cheng, Rui Ge, Shuting Zhang, Yanfeng Miao, Wei Zou, Chang Yi, Yan Sun, Yu Cao, Rong Yang, Yingqiang Wei, Qiang Guo, You Ke, Maotao Yu, Yizheng Jin, Yang Liu, Qingqing Ding, Dawei Di, Le Yang, Guichuan Xing, He Tian, Chuanhong Jin, Feng Gao, Richard H. Friend, Jianpu Wang and Wei Huang
This study presents perovskite light-emitting diodes (LEDs) based on solution-processed self-organized multiple quantum wells (MQWs), achieving high performance and stability. The MQW-based LED exhibits an external quantum efficiency of up to 11.7%, good stability, and high power performance with an energy conversion efficiency of 5.5% at a current density of 100 mA cm⁻². The high performance is attributed to the effective confinement of lower bandgap regions by higher energy gap MQWs, enabling efficient radiative decay. The study also demonstrates that the large interfacial areas between different bandgap regions do not cause luminescence quenching. The research explores the optical properties of perovskite films, showing that the absorption and emission features depend on the value of n, which represents the number of semiconducting MX₄ monolayer sheets. The study confirms that the (NMA)₂PbI₄ perovskite film (n=1) has a strong peak at 2.43 eV, while the NFPI₇ film (n=2) has a strong exciton absorption peak at 2.18 eV. The PL spectrum of the NFPI₇ film shows several weak emission peaks, indicating the presence of different n values. The study fabricates LEDs based on perovskite MQWs with a multi-layer structure, including ITO/PEIE-modified ZnO, perovskite MQWs, TFB, MoOₓ, and Au. The device shows excellent charge injection and transport, with an EQE of 9.6% at 2.3 V and a high radiance of 55 W sr⁻¹ m⁻² at 3.6 V. The NFPI₆B LED achieves an EQE of 11.7% at 2.6 V with a current density of 38 mA cm⁻², representing the highest EQE for perovskite-based LEDs. The study also demonstrates the color tunability of perovskite MQW LEDs by varying the halide compositions in precursor solutions, achieving narrow emission peaks at various wavelengths. The devices show good stability, with the EQE of the NFPI₆B devices dropping to half of the initial value after ~2 hours under a constant current density of 10 mA cm⁻². The research highlights the potential of perovskite MQWs for high-performance optoelectronic devices, with the ability to tune optical properties and achieve high efficiency and stability. The study also addresses the issue of device stability, which is a critical challenge in perovskite-based photovoltaics. The findings suggest that the use of perovskite MQWs can significantly improve the performance and stability of perovskite LEDs.This study presents perovskite light-emitting diodes (LEDs) based on solution-processed self-organized multiple quantum wells (MQWs), achieving high performance and stability. The MQW-based LED exhibits an external quantum efficiency of up to 11.7%, good stability, and high power performance with an energy conversion efficiency of 5.5% at a current density of 100 mA cm⁻². The high performance is attributed to the effective confinement of lower bandgap regions by higher energy gap MQWs, enabling efficient radiative decay. The study also demonstrates that the large interfacial areas between different bandgap regions do not cause luminescence quenching. The research explores the optical properties of perovskite films, showing that the absorption and emission features depend on the value of n, which represents the number of semiconducting MX₄ monolayer sheets. The study confirms that the (NMA)₂PbI₄ perovskite film (n=1) has a strong peak at 2.43 eV, while the NFPI₇ film (n=2) has a strong exciton absorption peak at 2.18 eV. The PL spectrum of the NFPI₇ film shows several weak emission peaks, indicating the presence of different n values. The study fabricates LEDs based on perovskite MQWs with a multi-layer structure, including ITO/PEIE-modified ZnO, perovskite MQWs, TFB, MoOₓ, and Au. The device shows excellent charge injection and transport, with an EQE of 9.6% at 2.3 V and a high radiance of 55 W sr⁻¹ m⁻² at 3.6 V. The NFPI₆B LED achieves an EQE of 11.7% at 2.6 V with a current density of 38 mA cm⁻², representing the highest EQE for perovskite-based LEDs. The study also demonstrates the color tunability of perovskite MQW LEDs by varying the halide compositions in precursor solutions, achieving narrow emission peaks at various wavelengths. The devices show good stability, with the EQE of the NFPI₆B devices dropping to half of the initial value after ~2 hours under a constant current density of 10 mA cm⁻². The research highlights the potential of perovskite MQWs for high-performance optoelectronic devices, with the ability to tune optical properties and achieve high efficiency and stability. The study also addresses the issue of device stability, which is a critical challenge in perovskite-based photovoltaics. The findings suggest that the use of perovskite MQWs can significantly improve the performance and stability of perovskite LEDs.
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