This study presents a phase-engineered synthesis method for atomically thin α-Te nanosheets and β-Te nanoribbons on WS₂ substrates, achieving high purity and crystallinity. By controlling atomic cluster density and interface interactions, the researchers successfully synthesized α-Te nanosheets with metallic to n-type semiconductor properties and β-Te nanoribbons with p-type semiconductor properties. The β-Te nanoribbons exhibit high hole mobility (~690.7 cm² V⁻¹ s⁻¹) and a high ON-state current density (~1527 μA μm⁻¹) at room temperature. Both phases show good air stability after several months. Short-channel β-Te nanoribbon transistors demonstrate remarkable electrical properties, including a high ON-state current density (~1270 μA μm⁻¹) and low ON-state resistance (0.63 kΩ μm) at V_ds = 1 V. The study also reveals the unique electronic and optical properties of α-Te and β-Te, including their bandgap tunability, high mobility, and potential applications in photodetectors, transistors, and energy devices. The phase engineering of α-Te and β-Te is crucial for developing high-performance, scalable 2D materials for future electronic and optoelectronic applications. The research demonstrates the feasibility of precise phase control in 2D materials through van der Waals epitaxy, enabling the integration of metal-semiconductor contacts and reducing contact resistance. This work provides a foundation for the development of large-scale, high-performance integrated circuits and other advanced devices.This study presents a phase-engineered synthesis method for atomically thin α-Te nanosheets and β-Te nanoribbons on WS₂ substrates, achieving high purity and crystallinity. By controlling atomic cluster density and interface interactions, the researchers successfully synthesized α-Te nanosheets with metallic to n-type semiconductor properties and β-Te nanoribbons with p-type semiconductor properties. The β-Te nanoribbons exhibit high hole mobility (~690.7 cm² V⁻¹ s⁻¹) and a high ON-state current density (~1527 μA μm⁻¹) at room temperature. Both phases show good air stability after several months. Short-channel β-Te nanoribbon transistors demonstrate remarkable electrical properties, including a high ON-state current density (~1270 μA μm⁻¹) and low ON-state resistance (0.63 kΩ μm) at V_ds = 1 V. The study also reveals the unique electronic and optical properties of α-Te and β-Te, including their bandgap tunability, high mobility, and potential applications in photodetectors, transistors, and energy devices. The phase engineering of α-Te and β-Te is crucial for developing high-performance, scalable 2D materials for future electronic and optoelectronic applications. The research demonstrates the feasibility of precise phase control in 2D materials through van der Waals epitaxy, enabling the integration of metal-semiconductor contacts and reducing contact resistance. This work provides a foundation for the development of large-scale, high-performance integrated circuits and other advanced devices.