The paper introduces phosphorene, a new 2D p-type semiconductor material derived from black phosphorus. Phosphorene shares a honeycomb lattice structure with graphene but exhibits unique properties due to its non-planar layer structure. The authors use ab initio density functional theory (DFT) calculations to determine the equilibrium structure, stability, and electronic properties of bulk and few-layer phosphorene. They find that phosphorene has a direct band gap that depends on the number of layers, with a significant dependence on in-plane stress. Transport studies reveal anisotropic carrier mobility, which is superior to that of MoS₂. The authors fabricate field-effect transistors using few-layer phosphorene and demonstrate high on-current, hole field-effect mobility, and an on/off ratio of up to \(10^4\). They also construct a CMOS inverter using phosphorene PMOS and MoS₂ NMOS transistors, showcasing the potential for integrating phosphorene into existing CMOS technology. The findings highlight phosphorene's promise as a high-mobility p-type semiconductor for advanced electronic applications.The paper introduces phosphorene, a new 2D p-type semiconductor material derived from black phosphorus. Phosphorene shares a honeycomb lattice structure with graphene but exhibits unique properties due to its non-planar layer structure. The authors use ab initio density functional theory (DFT) calculations to determine the equilibrium structure, stability, and electronic properties of bulk and few-layer phosphorene. They find that phosphorene has a direct band gap that depends on the number of layers, with a significant dependence on in-plane stress. Transport studies reveal anisotropic carrier mobility, which is superior to that of MoS₂. The authors fabricate field-effect transistors using few-layer phosphorene and demonstrate high on-current, hole field-effect mobility, and an on/off ratio of up to \(10^4\). They also construct a CMOS inverter using phosphorene PMOS and MoS₂ NMOS transistors, showcasing the potential for integrating phosphorene into existing CMOS technology. The findings highlight phosphorene's promise as a high-mobility p-type semiconductor for advanced electronic applications.