Phosphorene, a two-dimensional (2D) material derived from black phosphorus, exhibits high carrier mobility and is a promising p-type semiconductor for complementary metal-oxide-semiconductor (CMOS) applications. Researchers have demonstrated that few-layer phosphorene, a few-layered form of phosphorene, is stable, flexible, and can be mechanically exfoliated. Unlike graphene, phosphorene has an inherent, direct, and appreciable band gap that depends on the number of layers. Transport studies show that phosphorene has superior carrier mobility compared to MoS₂, with a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm²/V·s, and an on/off ratio up to 10⁴ at room temperature. The study also demonstrates the first 2D CMOS inverter using phosphorene PMOS and MoS₂ NMOS transistors. Phosphorene is a 2D semiconductor with unique properties, including anisotropic transport behavior and a direct band gap that varies with the number of layers. The material's unique ridge structure contributes to its anisotropic transport properties. Ab initio calculations show that phosphorene is a direct-gap semiconductor with a band gap of 0.9 eV in a monolayer and 0.1 eV in the bulk. The band gap is sensitive to in-layer stress and can transition from direct to indirect under compression. The study also reports a significant increase in carrier mobility when phosphorene is cooled from room temperature to 10 K, due to reduced phonon scattering. The researchers fabricated phosphorene-based field-effect transistors with a 1.0 μm channel length, achieving a high on-current of 194 mA/mm and a high field-effect mobility of 286 cm²/V·s. The study also demonstrates the first 2D CMOS inverter using phosphorene PMOS and MoS₂ NMOS transistors, highlighting the potential of phosphorene as a novel channel material for future electronic applications. The study also investigates the role of Schottky barriers in phosphorene transistors and their impact on device performance. The results show that phosphorene has significant potential for use in next-generation electronic devices due to its high carrier mobility, anisotropic transport properties, and compatibility with CMOS technology.Phosphorene, a two-dimensional (2D) material derived from black phosphorus, exhibits high carrier mobility and is a promising p-type semiconductor for complementary metal-oxide-semiconductor (CMOS) applications. Researchers have demonstrated that few-layer phosphorene, a few-layered form of phosphorene, is stable, flexible, and can be mechanically exfoliated. Unlike graphene, phosphorene has an inherent, direct, and appreciable band gap that depends on the number of layers. Transport studies show that phosphorene has superior carrier mobility compared to MoS₂, with a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm²/V·s, and an on/off ratio up to 10⁴ at room temperature. The study also demonstrates the first 2D CMOS inverter using phosphorene PMOS and MoS₂ NMOS transistors. Phosphorene is a 2D semiconductor with unique properties, including anisotropic transport behavior and a direct band gap that varies with the number of layers. The material's unique ridge structure contributes to its anisotropic transport properties. Ab initio calculations show that phosphorene is a direct-gap semiconductor with a band gap of 0.9 eV in a monolayer and 0.1 eV in the bulk. The band gap is sensitive to in-layer stress and can transition from direct to indirect under compression. The study also reports a significant increase in carrier mobility when phosphorene is cooled from room temperature to 10 K, due to reduced phonon scattering. The researchers fabricated phosphorene-based field-effect transistors with a 1.0 μm channel length, achieving a high on-current of 194 mA/mm and a high field-effect mobility of 286 cm²/V·s. The study also demonstrates the first 2D CMOS inverter using phosphorene PMOS and MoS₂ NMOS transistors, highlighting the potential of phosphorene as a novel channel material for future electronic applications. The study also investigates the role of Schottky barriers in phosphorene transistors and their impact on device performance. The results show that phosphorene has significant potential for use in next-generation electronic devices due to its high carrier mobility, anisotropic transport properties, and compatibility with CMOS technology.