Piezotronic neuromorphic devices: principle, manufacture, and applications Xiangde Lin, Zhenyu Feng, Yao Xiong, Wenwen Sun, Wanchen Yao, Yichen Wei, Zhong Lin Wang, and Qijun Sun Abstract: With the arrival of the era of artificial intelligence (AI) and big data, the explosive growth of data has raised higher demands on computer hardware and systems. Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck. Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner, with the capability to sense/store/process information of external stimuli. In this review, we have presented the piezotronic neuromorphic devices (which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure) and discussed their operating mechanisms and related manufacture techniques. Secondly, we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications, including bionic sensing, information storage, logic computing, and electrical/optical artificial synapses. Finally, in the context of future development, challenges, and perspectives, we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively. It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things, AI, biomedical engineering, etc. Keywords: piezotronics, neuromorphic devices, strain-gated transistors, piezoelectric nanogenerators, synaptic transistors Piezotronic neuromorphic devices are a type of neuromorphic device that utilizes the piezoelectric effect to modulate electrical transport characteristics. These devices are classified into two types based on their structure: strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors. The strain-gated piezotronic transistors utilize piezoelectric semiconductors directly as the channel materials, while the PENG-gated transistors couple the piezopotential with various FET devices for different applications. These devices have shown significant importance in the activation and modulation of artificial neuromorphic behaviors by using the piezotronic/piezoelectric effect. The piezoelectric effect refers to the phenomenon of uneven distribution of charges on the surface of certain materials when they are subjected to mechanical pressure or vibration, resulting in an electrical potential difference. Traditional piezoelectric materials, such as lead zirconate titanate with calcium titanite structure, have been widely applied in the fields of pressurePiezotronic neuromorphic devices: principle, manufacture, and applications Xiangde Lin, Zhenyu Feng, Yao Xiong, Wenwen Sun, Wanchen Yao, Yichen Wei, Zhong Lin Wang, and Qijun Sun Abstract: With the arrival of the era of artificial intelligence (AI) and big data, the explosive growth of data has raised higher demands on computer hardware and systems. Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck. Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner, with the capability to sense/store/process information of external stimuli. In this review, we have presented the piezotronic neuromorphic devices (which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure) and discussed their operating mechanisms and related manufacture techniques. Secondly, we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications, including bionic sensing, information storage, logic computing, and electrical/optical artificial synapses. Finally, in the context of future development, challenges, and perspectives, we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively. It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things, AI, biomedical engineering, etc. Keywords: piezotronics, neuromorphic devices, strain-gated transistors, piezoelectric nanogenerators, synaptic transistors Piezotronic neuromorphic devices are a type of neuromorphic device that utilizes the piezoelectric effect to modulate electrical transport characteristics. These devices are classified into two types based on their structure: strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors. The strain-gated piezotronic transistors utilize piezoelectric semiconductors directly as the channel materials, while the PENG-gated transistors couple the piezopotential with various FET devices for different applications. These devices have shown significant importance in the activation and modulation of artificial neuromorphic behaviors by using the piezotronic/piezoelectric effect. The piezoelectric effect refers to the phenomenon of uneven distribution of charges on the surface of certain materials when they are subjected to mechanical pressure or vibration, resulting in an electrical potential difference. Traditional piezoelectric materials, such as lead zirconate titanate with calcium titanite structure, have been widely applied in the fields of pressure