This study investigates the nature of defects in graphene using Raman Spectroscopy, focusing on the intensity ratio of the D and D' peaks. The authors analyze Raman spectra of graphene samples with different types of defects, including sp³-defects, vacancy-like defects, and boundaries in graphite. They find that the intensity ratio of the D and D' peaks is maximum for sp³-defects (~13), decreases for vacancy-like defects (~7), and reaches a minimum for boundaries in graphite (~3.5). This ratio is used to probe the nature of defects, with sp³-defects showing the highest ratio, vacancy-like defects showing a moderate ratio, and boundary-like defects showing the lowest ratio. The study also compares the results with ab-initio calculations and confirms the presence of vacancy-like defects in graphene produced by anodic bonding, while partially fluorinated graphene exhibits sp³ clusters. The findings highlight the utility of Raman Spectroscopy in characterizing disorder in graphene.This study investigates the nature of defects in graphene using Raman Spectroscopy, focusing on the intensity ratio of the D and D' peaks. The authors analyze Raman spectra of graphene samples with different types of defects, including sp³-defects, vacancy-like defects, and boundaries in graphite. They find that the intensity ratio of the D and D' peaks is maximum for sp³-defects (~13), decreases for vacancy-like defects (~7), and reaches a minimum for boundaries in graphite (~3.5). This ratio is used to probe the nature of defects, with sp³-defects showing the highest ratio, vacancy-like defects showing a moderate ratio, and boundary-like defects showing the lowest ratio. The study also compares the results with ab-initio calculations and confirms the presence of vacancy-like defects in graphene produced by anodic bonding, while partially fluorinated graphene exhibits sp³ clusters. The findings highlight the utility of Raman Spectroscopy in characterizing disorder in graphene.