This study presents a Raman spectroscopy-based method for quantifying point defects in graphene, showing that the ratio of D to G peak intensities depends on the laser excitation energy. By bombarding graphene with Ar+ ions, the researchers created samples with controlled defect densities and measured the D/G intensity ratio. They found that this ratio reaches a maximum when the inter-defect distance is approximately 3 nm. However, the same ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dependence on excitation energy resolved this ambiguity. The study also shows that the D/G intensity ratio increases with decreasing inter-defect distance (L_D) for a given laser energy. The researchers derived empirical formulas to quantify point defects in graphene samples with L_D ≥ 10 nm using any visible excitation energy. These formulas relate the defect density to the D/G intensity ratio and the excitation energy. The results indicate that the Raman coherence length (r_A) is independent of the excitation energy, while the strong dependence of the D/G ratio on the excitation energy is attributed to the parameter C_A, which may depend on interference effects. The study also discusses the evolution of Raman spectra in graphene as the defect density increases, distinguishing between two stages of disorder. In stage 1, the D/G ratio increases with decreasing defect density, while in stage 2, the ratio decreases. The G peak width (Γ_G) increases with disorder, allowing discrimination between stages 1 and 2. The results validate the use of Raman spectroscopy for quantifying point defects in graphene, providing a reliable method for determining defect density in graphene samples.This study presents a Raman spectroscopy-based method for quantifying point defects in graphene, showing that the ratio of D to G peak intensities depends on the laser excitation energy. By bombarding graphene with Ar+ ions, the researchers created samples with controlled defect densities and measured the D/G intensity ratio. They found that this ratio reaches a maximum when the inter-defect distance is approximately 3 nm. However, the same ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dependence on excitation energy resolved this ambiguity. The study also shows that the D/G intensity ratio increases with decreasing inter-defect distance (L_D) for a given laser energy. The researchers derived empirical formulas to quantify point defects in graphene samples with L_D ≥ 10 nm using any visible excitation energy. These formulas relate the defect density to the D/G intensity ratio and the excitation energy. The results indicate that the Raman coherence length (r_A) is independent of the excitation energy, while the strong dependence of the D/G ratio on the excitation energy is attributed to the parameter C_A, which may depend on interference effects. The study also discusses the evolution of Raman spectra in graphene as the defect density increases, distinguishing between two stages of disorder. In stage 1, the D/G ratio increases with decreasing defect density, while in stage 2, the ratio decreases. The G peak width (Γ_G) increases with disorder, allowing discrimination between stages 1 and 2. The results validate the use of Raman spectroscopy for quantifying point defects in graphene, providing a reliable method for determining defect density in graphene samples.