Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

04 January 2024 | Cian Gabbett, Luke Doolan, Kevin Synnatschke, Laura Gambini, Emmet Coleman, Adam G. Kelly, Shixin Liu, Eoin Caffrey, Jose Munuera, Catriona Murphy, Stefano Sanvito, Lewys Jones & Jonathan N. Coleman
This paper presents a high-resolution 3D imaging technique using focused ion beam – scanning electron microscopy nanotomography (FIB-SEM-NT) to quantitatively characterize the morphology of printed nanostructured networks. The technique is applied to graphene, WS₂, and silver nanosheets (AgNSs) as well as silver nanowires (AgNWs) to investigate the influence of nanosheet/nanowire size on network structure. The authors develop a comprehensive toolkit to extract morphological characteristics such as porosity, tortuosity, specific surface area, pore dimensions, and nanosheet orientation, linking these to network resistivity. The technique is extended to analyze interfaces within printed vertical heterostacks, demonstrating its potential for device characterization and optimization. The study highlights the importance of network morphology in determining device performance and provides a detailed method for characterizing the structure of nanostructured networks at the nanoscale.This paper presents a high-resolution 3D imaging technique using focused ion beam – scanning electron microscopy nanotomography (FIB-SEM-NT) to quantitatively characterize the morphology of printed nanostructured networks. The technique is applied to graphene, WS₂, and silver nanosheets (AgNSs) as well as silver nanowires (AgNWs) to investigate the influence of nanosheet/nanowire size on network structure. The authors develop a comprehensive toolkit to extract morphological characteristics such as porosity, tortuosity, specific surface area, pore dimensions, and nanosheet orientation, linking these to network resistivity. The technique is extended to analyze interfaces within printed vertical heterostacks, demonstrating its potential for device characterization and optimization. The study highlights the importance of network morphology in determining device performance and provides a detailed method for characterizing the structure of nanostructured networks at the nanoscale.
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