Quantum Light Generation based on GaN Microring towards Fully On-chip Source

Quantum Light Generation based on GaN Microring towards Fully On-chip Source

Dated: February 15, 2024 | Hong Zeng,1,2, Zhao-Qin He,3, Yun-Ru Fan,1,2, Yue Luo,1 Chen Lyu,1 Jin-Peng Wu,1,2 Yun-Bo Li,4 Sheng Liu,4 Dong Wang,4 De-Chao Zhang,4 Juan-Juan Zeng,1,5 Guang-Wei Deng,1,2 You Wang,1,6 Hai-Zhi Song,1,6 Zhen Wang,7 Li-Xing You,7 Kai Guo,8,4 Chang-Zheng Sun,3,8 Yi Luo,3 Guang-Can Guo,1,2,5,9 and Qiang Zhou,1,2,5,9,4
The paper presents a significant advancement in the field of quantum photonic integrated circuits (QPIC) by demonstrating the generation of correlated and entangled photon pairs using a gallium nitride (GaN) microring resonator (MRR) in the telecom C-band. The GaN MRR, designed with a free spectral range of 330 GHz and near-zero anomalous dispersion over 100 nm, is capable of generating energy-time entangled photon pairs with a raw two-photon interference visibility of 95.5±6.5%. The device also exhibits the ability to generate heralded single photons with a typical heralded second-order auto-correlation \( g^{(2)}(0) \) of 0.045±0.001. This work paves the way for the development of chip-scale quantum photonic circuits, leveraging the unique properties of GaN as a material platform for quantum light generation, active and passive manipulation, and detection. The results highlight the potential of GaN for fully on-chip integration of quantum light sources, which is crucial for large-scale quantum information processing and quantum networks.The paper presents a significant advancement in the field of quantum photonic integrated circuits (QPIC) by demonstrating the generation of correlated and entangled photon pairs using a gallium nitride (GaN) microring resonator (MRR) in the telecom C-band. The GaN MRR, designed with a free spectral range of 330 GHz and near-zero anomalous dispersion over 100 nm, is capable of generating energy-time entangled photon pairs with a raw two-photon interference visibility of 95.5±6.5%. The device also exhibits the ability to generate heralded single photons with a typical heralded second-order auto-correlation \( g^{(2)}(0) \) of 0.045±0.001. This work paves the way for the development of chip-scale quantum photonic circuits, leveraging the unique properties of GaN as a material platform for quantum light generation, active and passive manipulation, and detection. The results highlight the potential of GaN for fully on-chip integration of quantum light sources, which is crucial for large-scale quantum information processing and quantum networks.
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[slides and audio] Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source.