This paper presents the first demonstration of quantum light generation based on a gallium nitride (GaN) microring resonator in the telecom C-band, which has potential for fully integrated quantum photonic circuits. The GaN microring resonator has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The researchers demonstrated the generation of energy-time entangled photon pairs with a typical two-photon interference visibility of 95.5 ± 6.5%, and heralded single photons with a typical heralded second-order auto-correlation $ g_{H}^{(2)}(0) $ of 0.045 ± 0.001. These results pave the way for developing chip-scale quantum photonic circuits. The GaN microring resonator is fabricated on an undoped GaN film grown via metal-organic chemical vapor deposition. The device is characterized by a high quality factor (Q-factor) of $ 4.3 \times 10^{5} $ and a free spectral range of 330 GHz. The researchers also demonstrated the generation of correlated photon pairs with multi-wavelength properties and verified the energy-time entanglement of the generated photons. The results show that the GaN platform has remarkable potential for the development of all-on-chip quantum photonic circuits. The study was supported by several funding sources, including the Sichuan Science and Technology Program and the National Natural Science Foundation of China.This paper presents the first demonstration of quantum light generation based on a gallium nitride (GaN) microring resonator in the telecom C-band, which has potential for fully integrated quantum photonic circuits. The GaN microring resonator has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The researchers demonstrated the generation of energy-time entangled photon pairs with a typical two-photon interference visibility of 95.5 ± 6.5%, and heralded single photons with a typical heralded second-order auto-correlation $ g_{H}^{(2)}(0) $ of 0.045 ± 0.001. These results pave the way for developing chip-scale quantum photonic circuits. The GaN microring resonator is fabricated on an undoped GaN film grown via metal-organic chemical vapor deposition. The device is characterized by a high quality factor (Q-factor) of $ 4.3 \times 10^{5} $ and a free spectral range of 330 GHz. The researchers also demonstrated the generation of correlated photon pairs with multi-wavelength properties and verified the energy-time entanglement of the generated photons. The results show that the GaN platform has remarkable potential for the development of all-on-chip quantum photonic circuits. The study was supported by several funding sources, including the Sichuan Science and Technology Program and the National Natural Science Foundation of China.