This paper reviews recent advancements in Raman spectroscopy and imaging of graphene, highlighting its applications in fundamental studies and potential device applications. Raman spectroscopy and imaging are effective methods for determining the number of graphene layers, with the strong Raman signal of single-layer graphene (SLG) compared to graphite explained by an interference enhancement model. The effects of substrates, top layer deposition, annealing, and folding on graphene's physical and electronic properties are explored. The study also examines epitaxial graphene grown on SiC substrates, observing significant compressive strain. These findings contribute to a better understanding of graphene's properties and its potential in nano-electronic devices.This paper reviews recent advancements in Raman spectroscopy and imaging of graphene, highlighting its applications in fundamental studies and potential device applications. Raman spectroscopy and imaging are effective methods for determining the number of graphene layers, with the strong Raman signal of single-layer graphene (SLG) compared to graphite explained by an interference enhancement model. The effects of substrates, top layer deposition, annealing, and folding on graphene's physical and electronic properties are explored. The study also examines epitaxial graphene grown on SiC substrates, observing significant compressive strain. These findings contribute to a better understanding of graphene's properties and its potential in nano-electronic devices.