Graphene, a two-dimensional atomic crystal structure formed by closely packed sp² carbon atoms, has attracted significant attention due to its unique structure and properties. Raman spectroscopy, a rapid and precise method for material characterization, has been widely used to investigate the electronic band structure, phonon energy dispersion, and electron-phonon interaction in graphene systems. This review highlights recent advancements in using Raman spectroscopy to study graphene structure. It begins by introducing the typical Raman scattering features of graphene, such as the G band, G' band, and D band, and discusses their physical processes. These features can be used to distinguish the number of graphene layers, determine edge chirality, and monitor defects. The influence of stacking disorder on the optical properties and interlayer coupling of few-layer graphene is also discussed, showing how it affects the G' band intensity, shape, and frequency. The review further explores how the peak position, width, and intensity of the G band and G' band in graphene are influenced by factors such as doping, substrate, temperature, and strain, affecting the electronic structure of graphene. Additionally, the review introduces second-order overtone and combination Raman modes and low-frequency Raman features (shear and interlayer breathing modes) in graphene, discussing their dependence on the structure of graphene. Finally, it provides a comprehensive overview of the latest progress in using Raman spectroscopy to study graphene and its structural characterization.Graphene, a two-dimensional atomic crystal structure formed by closely packed sp² carbon atoms, has attracted significant attention due to its unique structure and properties. Raman spectroscopy, a rapid and precise method for material characterization, has been widely used to investigate the electronic band structure, phonon energy dispersion, and electron-phonon interaction in graphene systems. This review highlights recent advancements in using Raman spectroscopy to study graphene structure. It begins by introducing the typical Raman scattering features of graphene, such as the G band, G' band, and D band, and discusses their physical processes. These features can be used to distinguish the number of graphene layers, determine edge chirality, and monitor defects. The influence of stacking disorder on the optical properties and interlayer coupling of few-layer graphene is also discussed, showing how it affects the G' band intensity, shape, and frequency. The review further explores how the peak position, width, and intensity of the G band and G' band in graphene are influenced by factors such as doping, substrate, temperature, and strain, affecting the electronic structure of graphene. Additionally, the review introduces second-order overtone and combination Raman modes and low-frequency Raman features (shear and interlayer breathing modes) in graphene, discussing their dependence on the structure of graphene. Finally, it provides a comprehensive overview of the latest progress in using Raman spectroscopy to study graphene and its structural characterization.