This chapter reviews the advancements in Raman spectroscopy of graphene-based materials, both from fundamental research and practical device applications perspectives. Raman spectroscopy is a versatile technique used to identify and characterize the chemical and physical properties of these materials, making it essential in most studies involving graphene-based materials. The chapter covers the essential Raman scattering processes in intrinsic graphene, including the G, 2D, D, and 2D' modes, as well as the shear, layer-breathing, G, and 2D modes in multilayer graphene with different stacking orders. Techniques for determining the number of graphene layers, probing resonance Raman spectra, and obtaining Raman images are also discussed. The chapter highlights how Raman spectroscopy has been used to investigate the fundamental properties of graphene under external perturbations, such as defects, doping, strain, stress, and magnetic fields, which have been extended to other graphene-based materials like graphene quantum dots, carbon dots, graphene oxide, nanoribbons, and heterostructures. These properties have been crucial for understanding the states, effects, and mechanisms of graphene materials in various devices, including field-effect transistors, ion batteries, and solar cells. The review aims to provide a comprehensive guide for researchers interested in using Raman spectroscopy for characterizing graphene-related systems and devices.This chapter reviews the advancements in Raman spectroscopy of graphene-based materials, both from fundamental research and practical device applications perspectives. Raman spectroscopy is a versatile technique used to identify and characterize the chemical and physical properties of these materials, making it essential in most studies involving graphene-based materials. The chapter covers the essential Raman scattering processes in intrinsic graphene, including the G, 2D, D, and 2D' modes, as well as the shear, layer-breathing, G, and 2D modes in multilayer graphene with different stacking orders. Techniques for determining the number of graphene layers, probing resonance Raman spectra, and obtaining Raman images are also discussed. The chapter highlights how Raman spectroscopy has been used to investigate the fundamental properties of graphene under external perturbations, such as defects, doping, strain, stress, and magnetic fields, which have been extended to other graphene-based materials like graphene quantum dots, carbon dots, graphene oxide, nanoribbons, and heterostructures. These properties have been crucial for understanding the states, effects, and mechanisms of graphene materials in various devices, including field-effect transistors, ion batteries, and solar cells. The review aims to provide a comprehensive guide for researchers interested in using Raman spectroscopy for characterizing graphene-related systems and devices.