The paper presents the development of nano-scale 2D-fluorinated phenethylammonium lead iodide perovskite (F-PEAI) photodetectors, which are fabricated entirely in an atmosphere using standard electron beam lithography. These devices exhibit superior performance, including a room temperature detectivity of >5 × 10^17 Jones, a fast photoresponse with a rise time of 1.5 ns, an extremely large linear dynamic range (228 dB), and a photoresponsivity of approximately 1100 AW^-1. The photodetectors are compatible with a wide range of substrates, including flexible wearable media, and do not require planarization or atomically clean dielectrics. The sub-wavelength pixel size of the photodetectors, smaller than a fifth of the detected light wavelength, enables high-definition imaging. The study also explores the device's stability, performance under thermal cycling, and its application in imaging technologies. The findings highlight the potential of 2D F-PEAI photodetectors for advanced optoelectronic applications.The paper presents the development of nano-scale 2D-fluorinated phenethylammonium lead iodide perovskite (F-PEAI) photodetectors, which are fabricated entirely in an atmosphere using standard electron beam lithography. These devices exhibit superior performance, including a room temperature detectivity of >5 × 10^17 Jones, a fast photoresponse with a rise time of 1.5 ns, an extremely large linear dynamic range (228 dB), and a photoresponsivity of approximately 1100 AW^-1. The photodetectors are compatible with a wide range of substrates, including flexible wearable media, and do not require planarization or atomically clean dielectrics. The sub-wavelength pixel size of the photodetectors, smaller than a fifth of the detected light wavelength, enables high-definition imaging. The study also explores the device's stability, performance under thermal cycling, and its application in imaging technologies. The findings highlight the potential of 2D F-PEAI photodetectors for advanced optoelectronic applications.