This study presents the development of nano-scale 2D-fluorinated phenethylammonium lead iodide (F-PEAI) planar photodetectors fabricated entirely in atmosphere using standard electron beam lithography. These photodetectors exhibit exceptional performance, including a record room temperature detectivity of >5×10¹⁷ Jones, a fast photoresponse (rise time 1.5 ns), an extraordinarily large linear dynamic range (228 dB), and a photo-responsivity of ≈1100 AW⁻¹. The devices are stable from room temperature down to 4 K and can be reliably fabricated on a wide range of substrates, including flexible wearable media, without the need for planarization or atomically thin dielectrics. The photodetectors are also suitable for high-definition imaging due to their sub-wavelength pixel size of 100 nm. The 2D F-PEAI photodetectors demonstrate outstanding performance, rivaling commercial silicon photodiodes, and are compatible with a wide range of substrates. The study also shows that these photodetectors can be used for imaging technologies, with a 2D F-PEAI photodetector used to image a University of Exeter logo. The devices are also highly sensitive and stable, with a linear scaling of photocurrent with irradiance over 11 decades, corresponding to 228 dB. The study highlights the potential of 2D F-PEAI photodetectors for applications in extremely low-light conditions and high-definition imaging. The results demonstrate the potential of 2D F-PEAI photodetectors for use in optoelectronic applications, with performance comparable or superior to research-grade commercial Si or InGaAs photodetectors. The study also shows that these photodetectors are stable to thermal cycling over a wide temperature range from room temperature down to 4 K. The devices are fabricated on flexible substrates and retain their performance even after 1000 bending cycles in atmosphere conditions. The study also demonstrates the use of 2D F-PEAI photodetectors for high-definition imaging, with a 100 nm pixel size capable of imaging a laser beam profile with a spatial resolution of 100 nm. The results highlight the potential of 2D F-PEAI photodetectors for use in optoelectronic applications, with performance comparable or superior to research-grade commercial Si or InGaAs photodetectors.This study presents the development of nano-scale 2D-fluorinated phenethylammonium lead iodide (F-PEAI) planar photodetectors fabricated entirely in atmosphere using standard electron beam lithography. These photodetectors exhibit exceptional performance, including a record room temperature detectivity of >5×10¹⁷ Jones, a fast photoresponse (rise time 1.5 ns), an extraordinarily large linear dynamic range (228 dB), and a photo-responsivity of ≈1100 AW⁻¹. The devices are stable from room temperature down to 4 K and can be reliably fabricated on a wide range of substrates, including flexible wearable media, without the need for planarization or atomically thin dielectrics. The photodetectors are also suitable for high-definition imaging due to their sub-wavelength pixel size of 100 nm. The 2D F-PEAI photodetectors demonstrate outstanding performance, rivaling commercial silicon photodiodes, and are compatible with a wide range of substrates. The study also shows that these photodetectors can be used for imaging technologies, with a 2D F-PEAI photodetector used to image a University of Exeter logo. The devices are also highly sensitive and stable, with a linear scaling of photocurrent with irradiance over 11 decades, corresponding to 228 dB. The study highlights the potential of 2D F-PEAI photodetectors for applications in extremely low-light conditions and high-definition imaging. The results demonstrate the potential of 2D F-PEAI photodetectors for use in optoelectronic applications, with performance comparable or superior to research-grade commercial Si or InGaAs photodetectors. The study also shows that these photodetectors are stable to thermal cycling over a wide temperature range from room temperature down to 4 K. The devices are fabricated on flexible substrates and retain their performance even after 1000 bending cycles in atmosphere conditions. The study also demonstrates the use of 2D F-PEAI photodetectors for high-definition imaging, with a 100 nm pixel size capable of imaging a laser beam profile with a spatial resolution of 100 nm. The results highlight the potential of 2D F-PEAI photodetectors for use in optoelectronic applications, with performance comparable or superior to research-grade commercial Si or InGaAs photodetectors.