This study presents a novel domain-engineered bismuth titanate (BIT) ceramic system that exhibits super-high piezoelectric performance and excellent fatigue resistance. The researchers introduced high-density layered (001)-type 180° domain walls and formed small-size multi-domain states with low energy barriers, which significantly enhanced the electrical properties. The optimized domain structures were revealed through multi-scale microscopy techniques, including Z-contrast imaging and atomic-resolution polarization mapping. The results show that the introduction of dopants, such as Ce, W, and Nb, led to a super-high piezoelectric coefficient (d33~38.5 pC/N) and an ultra-high inverse piezoelectric coefficient (d33*~46.7 pm/V) at low electric fields. The ceramics also demonstrated excellent fatigue behavior, with only a 4% decrease in ferroelectric polarization up to 10^7 cycles. The study provides insights into the structural features of ferroelectric domains in BIT ceramics and opens new avenues for developing super-high-performance bismuth layer-structured ferroelectrics via domain engineering.This study presents a novel domain-engineered bismuth titanate (BIT) ceramic system that exhibits super-high piezoelectric performance and excellent fatigue resistance. The researchers introduced high-density layered (001)-type 180° domain walls and formed small-size multi-domain states with low energy barriers, which significantly enhanced the electrical properties. The optimized domain structures were revealed through multi-scale microscopy techniques, including Z-contrast imaging and atomic-resolution polarization mapping. The results show that the introduction of dopants, such as Ce, W, and Nb, led to a super-high piezoelectric coefficient (d33~38.5 pC/N) and an ultra-high inverse piezoelectric coefficient (d33*~46.7 pm/V) at low electric fields. The ceramics also demonstrated excellent fatigue behavior, with only a 4% decrease in ferroelectric polarization up to 10^7 cycles. The study provides insights into the structural features of ferroelectric domains in BIT ceramics and opens new avenues for developing super-high-performance bismuth layer-structured ferroelectrics via domain engineering.